TY - GEN
T1 - Spurious mode suppression in SH0 Lithium Niobate laterally vibrating MEMS resonators
AU - Song, Yong Ha
AU - Gong, Songbin
N1 - Funding Information:
The authors would like to thank the DARPA young faculty award program for funding support.
Publisher Copyright:
© 2015 IEEE.
PY - 2015/2/16
Y1 - 2015/2/16
N2 - This paper reports on the development of a spurious mode suppression technique for shear horizontal (SH0) mode Lithium Niobate (LiNbO3) laterally vibrating MEMS resonators. The method employs an optimized overlapping length between adjacent interdigitated electrodes to modify the presence of stress and electric field distribution in the resonator body, subsequently enabling near zero electromechanical coupling (kf2) for the higher order transverse spurious modes. The technique can be applied to devices with different center frequencies without additional fabrication steps by lithographically modifying the electrode configuration. It has resulted in the first demonstration of LiNbO3-LVRs that features an unprecedented spectral range of spurious-free response (130-170 MHz). In addition, the fabricated spurious-mode-free device, with an orientation of 10° to-Y-axis on the X-cut plane, has shown a kt2 of 20.6%, a quality factor (Q) of 1064, and thereby an exceptionally high figure of merit (FoM) of 220.
AB - This paper reports on the development of a spurious mode suppression technique for shear horizontal (SH0) mode Lithium Niobate (LiNbO3) laterally vibrating MEMS resonators. The method employs an optimized overlapping length between adjacent interdigitated electrodes to modify the presence of stress and electric field distribution in the resonator body, subsequently enabling near zero electromechanical coupling (kf2) for the higher order transverse spurious modes. The technique can be applied to devices with different center frequencies without additional fabrication steps by lithographically modifying the electrode configuration. It has resulted in the first demonstration of LiNbO3-LVRs that features an unprecedented spectral range of spurious-free response (130-170 MHz). In addition, the fabricated spurious-mode-free device, with an orientation of 10° to-Y-axis on the X-cut plane, has shown a kt2 of 20.6%, a quality factor (Q) of 1064, and thereby an exceptionally high figure of merit (FoM) of 220.
KW - Lithium niobate
KW - high electromechanical coupling
KW - laterally vibrating resonators
KW - piezoelectric resonators
KW - spurious mode suppression
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U2 - 10.1109/IEDM.2015.7409728
DO - 10.1109/IEDM.2015.7409728
M3 - Conference contribution
AN - SCOPUS:84964008567
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 18.5.1-18.5.4
BT - 2015 IEEE International Electron Devices Meeting, IEDM 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 61st IEEE International Electron Devices Meeting, IEDM 2015
Y2 - 7 December 2015 through 9 December 2015
ER -