Spur-free dynamic range measurements of the hybrid light emitting transistor

P. L. Lam, John Michael Dallesasse, G. Walter

Research output: Contribution to conferencePaper

Abstract

This letter reports the spur free dynamic range (SFDR) of hybrid light emitting transistors operating in the common-emitter configuration. Two tone signals at 0.995 GHz and 1.005 GHz are used to modulate the base of the hybrid Light-Emitting Transistor (LET) at a base current (IB) of 3 mA. The second-order intermodulation distortion (IM2) and third-order intermodulation distortion (IM3) are determined to be 70.6 dB-Hz1/2 and 86.3 dB-Hz2/3 respectively. An optical bandwidth measurement f 3dB for the hybrid LET of 5 GHz is also demonstrated.

Original languageEnglish (US)
Pages91-94
Number of pages4
StatePublished - Jan 1 2014
Event2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 - Denver, CO, United States
Duration: May 19 2014May 22 2014

Other

Other2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014
CountryUnited States
CityDenver, CO
Period5/19/145/22/14

Fingerprint

Intermodulation distortion
Transistors
Bandwidth

Keywords

  • Hybrid light emitting transistor
  • Spur-free dynamic range

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Lam, P. L., Dallesasse, J. M., & Walter, G. (2014). Spur-free dynamic range measurements of the hybrid light emitting transistor. 91-94. Paper presented at 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014, Denver, CO, United States.

Spur-free dynamic range measurements of the hybrid light emitting transistor. / Lam, P. L.; Dallesasse, John Michael; Walter, G.

2014. 91-94 Paper presented at 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014, Denver, CO, United States.

Research output: Contribution to conferencePaper

Lam, PL, Dallesasse, JM & Walter, G 2014, 'Spur-free dynamic range measurements of the hybrid light emitting transistor', Paper presented at 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014, Denver, CO, United States, 5/19/14 - 5/22/14 pp. 91-94.
Lam PL, Dallesasse JM, Walter G. Spur-free dynamic range measurements of the hybrid light emitting transistor. 2014. Paper presented at 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014, Denver, CO, United States.
Lam, P. L. ; Dallesasse, John Michael ; Walter, G. / Spur-free dynamic range measurements of the hybrid light emitting transistor. Paper presented at 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014, Denver, CO, United States.4 p.
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