Abstract
This letter reports the spur free dynamic range (SFDR) of hybrid light emitting transistors operating in the common-emitter configuration. Two tone signals at 0.995 GHz and 1.005 GHz are used to modulate the base of the hybrid Light-Emitting Transistor (LET) at a base current (IB) of 3 mA. The second-order intermodulation distortion (IM2) and third-order intermodulation distortion (IM3) are determined to be 70.6 dB-Hz1/2 and 86.3 dB-Hz2/3 respectively. An optical bandwidth measurement f 3dB for the hybrid LET of 5 GHz is also demonstrated.
Original language | English (US) |
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Pages | 91-94 |
Number of pages | 4 |
State | Published - 2014 |
Event | 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 - Denver, CO, United States Duration: May 19 2014 → May 22 2014 |
Other
Other | 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 |
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Country/Territory | United States |
City | Denver, CO |
Period | 5/19/14 → 5/22/14 |
Keywords
- Hybrid light emitting transistor
- Spur-free dynamic range
ASJC Scopus subject areas
- Electrical and Electronic Engineering