Spur-free dynamic range measurements of the hybrid light emitting transistor

P. L. Lam, John Michael Dallesasse, G. Walter

Research output: Contribution to conferencePaper

Abstract

This letter reports the spur free dynamic range (SFDR) of hybrid light emitting transistors operating in the common-emitter configuration. Two tone signals at 0.995 GHz and 1.005 GHz are used to modulate the base of the hybrid Light-Emitting Transistor (LET) at a base current (IB) of 3 mA. The second-order intermodulation distortion (IM2) and third-order intermodulation distortion (IM3) are determined to be 70.6 dB-Hz1/2 and 86.3 dB-Hz2/3 respectively. An optical bandwidth measurement f 3dB for the hybrid LET of 5 GHz is also demonstrated.

Original languageEnglish (US)
Pages91-94
Number of pages4
StatePublished - Jan 1 2014
Event2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 - Denver, CO, United States
Duration: May 19 2014May 22 2014

Other

Other2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014
CountryUnited States
CityDenver, CO
Period5/19/145/22/14

Keywords

  • Hybrid light emitting transistor
  • Spur-free dynamic range

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Lam, P. L., Dallesasse, J. M., & Walter, G. (2014). Spur-free dynamic range measurements of the hybrid light emitting transistor. 91-94. Paper presented at 2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014, Denver, CO, United States.