Abstract
We report spontaneous Raman scattering at 1550 nm in ultrasmall silicon-on-insulator (SOI) strip waveguides of 0.098-μm2 cross-sectional area. The submicrometer-scale dimensions provide tight optical confinement and, hence, highly efficient Raman scattering with milliwatt-level cw pump powers. The prospect of Raman amplification in such a deeply scaled-down waveguide device in the presence of various loss mechanisms, particularly free-carrier loss that arises from two-photon absorption, is discussed, and the feasibility of high-gain SOI-based fully integrated optical amplifiers is shown.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2755-2757 |
| Number of pages | 3 |
| Journal | Optics Letters |
| Volume | 29 |
| Issue number | 23 |
| DOIs | |
| State | Published - Dec 1 2004 |
| Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
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