Abstract
We report spontaneous Raman scattering at 1550 nm in ultrasmall silicon-on-insulator (SOI) strip waveguides of 0.098-μm2 cross-sectional area. The submicrometer-scale dimensions provide tight optical confinement and, hence, highly efficient Raman scattering with milliwatt-level cw pump powers. The prospect of Raman amplification in such a deeply scaled-down waveguide device in the presence of various loss mechanisms, particularly free-carrier loss that arises from two-photon absorption, is discussed, and the feasibility of high-gain SOI-based fully integrated optical amplifiers is shown.
Original language | English (US) |
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Pages (from-to) | 2755-2757 |
Number of pages | 3 |
Journal | Optics Letters |
Volume | 29 |
Issue number | 23 |
DOIs | |
State | Published - Dec 1 2004 |
Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics