Spontaneous Raman scattering in ultrasmall silicon waveguides

Jerry I. Dadap; Richard L. Espinola; Richard M. Osgood; Sharee J. McNab; Yurii A. Vlasov

doi:10.1364/OL.29.002755

Spontaneous Raman scattering in ultrasmall silicon waveguides

Jerry I. Dadap, Richard L. Espinola, Richard M. Osgood, Sharee J. McNab, Yurii A. Vlasov

Research output: Contribution to journal › Article › peer-review

Abstract

We report spontaneous Raman scattering at 1550 nm in ultrasmall silicon-on-insulator (SOI) strip waveguides of 0.098-μm² cross-sectional area. The submicrometer-scale dimensions provide tight optical confinement and, hence, highly efficient Raman scattering with milliwatt-level cw pump powers. The prospect of Raman amplification in such a deeply scaled-down waveguide device in the presence of various loss mechanisms, particularly free-carrier loss that arises from two-photon absorption, is discussed, and the feasibility of high-gain SOI-based fully integrated optical amplifiers is shown.

Original language	English (US)
Pages (from-to)	2755-2757
Number of pages	3
Journal	Optics Letters
Volume	29
Issue number	23
DOIs	https://doi.org/10.1364/OL.29.002755
State	Published - Dec 1 2004
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OL.29.002755

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AU - Vlasov, Yurii A.

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AB - We report spontaneous Raman scattering at 1550 nm in ultrasmall silicon-on-insulator (SOI) strip waveguides of 0.098-μm2 cross-sectional area. The submicrometer-scale dimensions provide tight optical confinement and, hence, highly efficient Raman scattering with milliwatt-level cw pump powers. The prospect of Raman amplification in such a deeply scaled-down waveguide device in the presence of various loss mechanisms, particularly free-carrier loss that arises from two-photon absorption, is discussed, and the feasibility of high-gain SOI-based fully integrated optical amplifiers is shown.

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Spontaneous Raman scattering in ultrasmall silicon waveguides

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