Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics

Samuel J. Whiteley, Gary Wolfowicz, Christopher P. Anderson, Alexandre Bourassa, He Ma, Meng Ye, Gerwin Koolstra, Kevin J. Satzinger, Martin V. Holt, F. Joseph Heremans, Andrew N. Cleland, David I. Schuster, Giulia Galli, David D. Awschalom

Research output: Contribution to journalArticlepeer-review

Abstract

Hybrid spin–mechanical systems provide a platform for integrating quantum registers and transducers. Efficient creation and control of such systems require a comprehensive understanding of the individual spin and mechanical components as well as their mutual interactions. Point defects in silicon carbide (SiC) offer long-lived, optically addressable spin registers in a wafer-scale material with low acoustic losses, making them natural candidates for integration with high-quality-factor mechanical resonators. Here, we show Gaussian focusing of a surface acoustic wave in SiC, characterized using a stroboscopic X-ray diffraction imaging technique, which delivers direct, strain amplitude information at nanoscale spatial resolution. Using ab initio calculations, we provide a more complete picture of spin–strain coupling for various defects in SiC with C 3v symmetry. This reveals the importance of shear strain for future device engineering and enhanced spin–mechanical coupling. We demonstrate all-optical detection of acoustic paramagnetic resonance without microwave magnetic fields, relevant for sensing applications. Finally, we show mechanically driven Autler–Townes splittings and magnetically forbidden Rabi oscillations. These results offer a basis for full strain control of three-level spin systems.

Original languageEnglish (US)
Pages (from-to)490-495
Number of pages6
JournalNature Physics
Volume15
Issue number5
DOIs
StatePublished - May 1 2019
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy

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