Spin valve effect in self-exchange biased ferromagnetic metal/semiconductor bilayers

M. Zhu, M. J. Wilson, B. L. Sheu, P. Mitra, P. Schiffer, N. Samarth

Research output: Contribution to journalArticle

Abstract

We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs (Ga,Mn) As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, resulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAsp-GaAs (Ga,Mn) As trilayers show that the exchange coupling diminishes with spatial separation between the layers.

Original languageEnglish (US)
Article number192503
JournalApplied Physics Letters
Volume91
Issue number19
DOIs
StatePublished - Nov 19 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Zhu, M., Wilson, M. J., Sheu, B. L., Mitra, P., Schiffer, P., & Samarth, N. (2007). Spin valve effect in self-exchange biased ferromagnetic metal/semiconductor bilayers. Applied Physics Letters, 91(19), [192503]. https://doi.org/10.1063/1.2806966