Abstract
A large tunneling magnetoresistance was observed in epitaxial hybrid magnetic tunnel junctions composed of MnAs/AlAs/GaMnAs. The low temperature current-voltage characteristics were in accord with those of a tunneling process through an asymmetric barrier. These experiments confirm that efficient spin injection from metals into semiconductors is possible when a suitable tunnel barrier is used.
Original language | English (US) |
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Pages (from-to) | 131-134 |
Number of pages | 4 |
Journal | Institute of Physics Conference Series |
Volume | 184 |
State | Published - 2005 |
Externally published | Yes |
Event | 31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of Duration: Sep 12 2004 → Dec 16 2004 |
ASJC Scopus subject areas
- General Physics and Astronomy