Abstract
We present a Raman-scattering study of the metal-semiconductor transition in EuB6. The metalsemiconductor (MS) transition in this compound manifests itself as a change from a diffusive electronic scattering response in the high-temperature paramagnetic phase, to a flat continuum scattering response in the low-temperature ferromagnetic metal phase which is characteristic of a strongly correlated metal. Most interesting is evidence that the MS transition in EuB6 is precipitated by the formation of bound magnetic polarons involving carriers bound to defects.
Original language | English (US) |
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Pages (from-to) | 2717-2721 |
Number of pages | 5 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 56 |
Issue number | 5 |
DOIs | |
State | Published - 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics