Spectroscopic study of bound magnetic polaron formation and the metal-semiconductor transition

P. Nyhus, S. Yoon, M. Kauffman, S. Cooper, Z. Fisk, J. Sarrao

Research output: Contribution to journalArticlepeer-review

Abstract

We present a Raman-scattering study of the metal-semiconductor transition in EuB6. The metalsemiconductor (MS) transition in this compound manifests itself as a change from a diffusive electronic scattering response in the high-temperature paramagnetic phase, to a flat continuum scattering response in the low-temperature ferromagnetic metal phase which is characteristic of a strongly correlated metal. Most interesting is evidence that the MS transition in EuB6 is precipitated by the formation of bound magnetic polarons involving carriers bound to defects.

Original languageEnglish (US)
Pages (from-to)2717-2721
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume56
Issue number5
DOIs
StatePublished - 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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