We present a Raman-scattering study of the metal-semiconductor transition in EuB6. The metalsemiconductor (MS) transition in this compound manifests itself as a change from a diffusive electronic scattering response in the high-temperature paramagnetic phase, to a flat continuum scattering response in the low-temperature ferromagnetic metal phase which is characteristic of a strongly correlated metal. Most interesting is evidence that the MS transition in EuB6 is precipitated by the formation of bound magnetic polarons involving carriers bound to defects.
|Original language||English (US)|
|Number of pages||5|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 1997|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics