We report the observation by spectroscopic ellipsometry of a charge-transfer-type p-to-d transition in Zn 1-xCo xSe films grown on GaAs substrates with 0 ≤ x < 0.1. For x > 0.04 samples, we observed an absorption feature near 4.3 eV within the Eo + Δ 0 - E 1 band gap region. This new structure appears to have the characteristics of a charge-transfer-type p-to-d transition. A many-body approach was used to interpret this feature as a local charge-transfer transition. Another observation, the decrease of the interference pattern above 2.2 eV, was explained as a nonlocal charge-transfer transition. A calculation using a multilayer model (air/Zn 1-xCo xSe/GaAs) showed the same behavior as that of the measured spectrum.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|State||Published - 1997|
ASJC Scopus subject areas
- Physics and Astronomy(all)