Spectrally and temporally engineered processing using photoelectrochemistry

Chris Edwards; Lynford L Goddard; Gang "Logan" Liu; Xin Yu; Shailendra N Srivastava; Catherine Britt Carlson; Julianne K Lee; Terry Koker; Samuel P Washington; Lonna D Edwards; Kaiyuan Wang

Spectrally and temporally engineered processing using photoelectrochemistry

Chris Edwards (Inventor), Lynford L Goddard (Inventor), Gang "Logan" Liu (Inventor), Xin Yu (Inventor), Shailendra N Srivastava (Inventor), Catherine Britt Carlson (Inventor), Julianne K Lee (Inventor), Terry Koker (Inventor), Samuel P Washington (Inventor), Lonna D Edwards (Inventor), Kaiyuan Wang (Inventor)

Research output: Patent

Abstract

Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. Charge carriers are driven away from the surface of the semiconductor on a timescale short compared to the carrier recombination lifetime. Such methods are applied to creating a spatially varying doping profile in the semiconductor substrate, a photonic integrated circuit and an integrated photonic microfluidic circuit.

Original language	English (US)
U.S. patent number	10734237
Filing date	5/22/18
State	Published - Aug 4 2020

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@misc{3446115c37db4ac1bf94e7ba9d366601,

title = "Spectrally and temporally engineered processing using photoelectrochemistry",

abstract = "Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. Charge carriers are driven away from the surface of the semiconductor on a timescale short compared to the carrier recombination lifetime. Such methods are applied to creating a spatially varying doping profile in the semiconductor substrate, a photonic integrated circuit and an integrated photonic microfluidic circuit.",

author = "Chris Edwards and Goddard, {Lynford L} and Liu, {Gang {"}Logan{"}} and Xin Yu and Srivastava, {Shailendra N} and Carlson, {Catherine Britt} and Lee, {Julianne K} and Terry Koker and Washington, {Samuel P} and Edwards, {Lonna D} and Kaiyuan Wang",

year = "2020",

month = aug,

day = "4",

language = "English (US)",

type = "Patent",

note = "10734237",

}

TY - PAT

T1 - Spectrally and temporally engineered processing using photoelectrochemistry

AU - Edwards, Chris

AU - Goddard, Lynford L

AU - Liu, Gang "Logan"

AU - Yu, Xin

AU - Srivastava, Shailendra N

AU - Carlson, Catherine Britt

AU - Lee, Julianne K

AU - Koker, Terry

AU - Washington, Samuel P

AU - Edwards, Lonna D

AU - Wang, Kaiyuan

PY - 2020/8/4

Y1 - 2020/8/4

N2 - Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. Charge carriers are driven away from the surface of the semiconductor on a timescale short compared to the carrier recombination lifetime. Such methods are applied to creating a spatially varying doping profile in the semiconductor substrate, a photonic integrated circuit and an integrated photonic microfluidic circuit.

AB - Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. Charge carriers are driven away from the surface of the semiconductor on a timescale short compared to the carrier recombination lifetime. Such methods are applied to creating a spatially varying doping profile in the semiconductor substrate, a photonic integrated circuit and an integrated photonic microfluidic circuit.

M3 - Patent

M1 - 10734237

Y2 - 2018/05/22

ER -

Spectrally and temporally engineered processing using photoelectrochemistry

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