Spectral response during modulation of hybrid ion implanted selectively oxidized VCSELs

E. W. Young; Kent D Choquette; S. L. Chuang; K. M. Geib; A. A. Allerman

doi:10.1109/cleo.2001.947549

Spectral response during modulation of hybrid ion implanted selectively oxidized VCSELs

E. W. Young, Kent D Choquette, S. L. Chuang, K. M. Geib, A. A. Allerman

Research output: Contribution to conference › Paper › peer-review

Abstract

Hybrid implant/oxide vertical cavity surface emitting lasers (VCSEL) were shown to emit high pulse single mode output power under continuous wave and pulsed pre-biased operation. The VCSEL wafer was grown by metalorganic vapor phase epitaxy on a semi-insulating GaAs substrate. Proton implantation was performed to define gain apertures from 4 to 14 μm diameter. For short pulse width, thermal effects were not present and higher order modes reached threshold first due to current crowding effects which were exacerbated by the coplanar contacts.

Original language	English (US)
Pages	108-109
Number of pages	2
DOIs	https://doi.org/10.1109/cleo.2001.947549
State	Published - 2001
Event	Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: May 6 2001 → May 11 2001

Other

Other	Conference on Lasers and Electro-Optics (CLEO)
Country/Territory	United States
City	Baltimore, MD
Period	5/6/01 → 5/11/01

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

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10.1109/cleo.2001.947549

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title = "Spectral response during modulation of hybrid ion implanted selectively oxidized VCSELs",

abstract = "Hybrid implant/oxide vertical cavity surface emitting lasers (VCSEL) were shown to emit high pulse single mode output power under continuous wave and pulsed pre-biased operation. The VCSEL wafer was grown by metalorganic vapor phase epitaxy on a semi-insulating GaAs substrate. Proton implantation was performed to define gain apertures from 4 to 14 μm diameter. For short pulse width, thermal effects were not present and higher order modes reached threshold first due to current crowding effects which were exacerbated by the coplanar contacts.",

author = "Young, {E. W.} and Choquette, {Kent D} and Chuang, {S. L.} and Geib, {K. M.} and Allerman, {A. A.}",

year = "2001",

doi = "10.1109/cleo.2001.947549",

language = "English (US)",

pages = "108--109",

note = "Conference on Lasers and Electro-Optics (CLEO) ; Conference date: 06-05-2001 Through 11-05-2001",

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T1 - Spectral response during modulation of hybrid ion implanted selectively oxidized VCSELs

AU - Young, E. W.

AU - Choquette, Kent D

AU - Chuang, S. L.

AU - Geib, K. M.

AU - Allerman, A. A.

PY - 2001

Y1 - 2001

N2 - Hybrid implant/oxide vertical cavity surface emitting lasers (VCSEL) were shown to emit high pulse single mode output power under continuous wave and pulsed pre-biased operation. The VCSEL wafer was grown by metalorganic vapor phase epitaxy on a semi-insulating GaAs substrate. Proton implantation was performed to define gain apertures from 4 to 14 μm diameter. For short pulse width, thermal effects were not present and higher order modes reached threshold first due to current crowding effects which were exacerbated by the coplanar contacts.

AB - Hybrid implant/oxide vertical cavity surface emitting lasers (VCSEL) were shown to emit high pulse single mode output power under continuous wave and pulsed pre-biased operation. The VCSEL wafer was grown by metalorganic vapor phase epitaxy on a semi-insulating GaAs substrate. Proton implantation was performed to define gain apertures from 4 to 14 μm diameter. For short pulse width, thermal effects were not present and higher order modes reached threshold first due to current crowding effects which were exacerbated by the coplanar contacts.

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DO - 10.1109/cleo.2001.947549

M3 - Paper

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EP - 109

T2 - Conference on Lasers and Electro-Optics (CLEO)

Y2 - 6 May 2001 through 11 May 2001

ER -

Spectral response during modulation of hybrid ion implanted selectively oxidized VCSELs

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