Special reliability features for Hf-based high-k gate dielectrics

T. P. Ma, Huiming M. Bu, X. W. Wang, Liyang Y. Song, W. He, Miaomiao Wang, H. H. Tseng, P. J. Tobin

Research output: Contribution to journalArticlepeer-review

Abstract

Several special reliability features for Hf-based high-k gate dielectrics are highlighted, including: 1) trapping-induced threshold voltage (V th) shift is much more of a concern than TDDB in determining the operating lifetime; 2) n-channel MOSFETs (nMOSFETs) are more vulnerable than p-channel MOSFETs (pMOSFETs); and 3) MOSFETs with polySi gates are more vulnerable than those with metal gates. These will be discussed in the context of existing electron/hole traps and trap generation by high-field stress. A novel technique to probe traps in ultrathin gate dielectrics, inelastic electron tunneling spectroscopy (IETS), will be shown to be capable of revealing the energies and locations of traps in high-k gate dielectrics.

Original languageEnglish (US)
Pages (from-to)36-44
Number of pages9
JournalIEEE Transactions on Device and Materials Reliability
Volume5
Issue number1
DOIs
StatePublished - Mar 2005
Externally publishedYes

Keywords

  • Gate dielectrics
  • High-k
  • Metal gates versus poly Si gates
  • Operating lifetime
  • Reliability
  • Trapping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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