Special reliability features for Hf-based high-k gate dielectrics

T. P. Ma; Huiming M. Bu; X. W. Wang; Liyang Y. Song; W. He; Miaomiao Wang; H. H. Tseng; P. J. Tobin

doi:10.1109/TDMR.2005.845329

Special reliability features for Hf-based high-k gate dielectrics

T. P. Ma, Huiming M. Bu, X. W. Wang, Liyang Y. Song, W. He, Miaomiao Wang, H. H. Tseng, P. J. Tobin

Research output: Contribution to journal › Article › peer-review

Abstract

Several special reliability features for Hf-based high-k gate dielectrics are highlighted, including: 1) trapping-induced threshold voltage (V _th) shift is much more of a concern than TDDB in determining the operating lifetime; 2) n-channel MOSFETs (nMOSFETs) are more vulnerable than p-channel MOSFETs (pMOSFETs); and 3) MOSFETs with polySi gates are more vulnerable than those with metal gates. These will be discussed in the context of existing electron/hole traps and trap generation by high-field stress. A novel technique to probe traps in ultrathin gate dielectrics, inelastic electron tunneling spectroscopy (IETS), will be shown to be capable of revealing the energies and locations of traps in high-k gate dielectrics.

Original language	English (US)
Pages (from-to)	36-44
Number of pages	9
Journal	IEEE Transactions on Device and Materials Reliability
Volume	5
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2005.845329
State	Published - Mar 2005
Externally published	Yes

Keywords

Gate dielectrics
High-k
Metal gates versus poly Si gates
Operating lifetime
Reliability
Trapping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Online availability

10.1109/TDMR.2005.845329

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title = "Special reliability features for Hf-based high-k gate dielectrics",

abstract = "Several special reliability features for Hf-based high-k gate dielectrics are highlighted, including: 1) trapping-induced threshold voltage (V th) shift is much more of a concern than TDDB in determining the operating lifetime; 2) n-channel MOSFETs (nMOSFETs) are more vulnerable than p-channel MOSFETs (pMOSFETs); and 3) MOSFETs with polySi gates are more vulnerable than those with metal gates. These will be discussed in the context of existing electron/hole traps and trap generation by high-field stress. A novel technique to probe traps in ultrathin gate dielectrics, inelastic electron tunneling spectroscopy (IETS), will be shown to be capable of revealing the energies and locations of traps in high-k gate dielectrics.",

keywords = "Gate dielectrics, High-k, Metal gates versus poly Si gates, Operating lifetime, Reliability, Trapping",

author = "Ma, {T. P.} and Bu, {Huiming M.} and Wang, {X. W.} and Song, {Liyang Y.} and W. He and Miaomiao Wang and Tseng, {H. H.} and Tobin, {P. J.}",

note = "Funding Information: Manuscript received September 28, 2004; revised November 15, 2004. This work was supported in part by the SRC, and by the SRC/Sematech FEP Center. T. P. Ma, H. M. Bu, X. W. Wang, L. Y. Song, W. He, and M. M. Wang are with Yale University, New Haven, CT 06511 USA (e-mail: [email protected]). H.-H. Tseng and P. J. Tobin are with Freescale Co., Austin, Texas 78721 USA. Digital Object Identifier 10.1109/TDMR.2005.845329",

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AU - Bu, Huiming M.

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AU - He, W.

AU - Wang, Miaomiao

AU - Tseng, H. H.

AU - Tobin, P. J.

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N2 - Several special reliability features for Hf-based high-k gate dielectrics are highlighted, including: 1) trapping-induced threshold voltage (V th) shift is much more of a concern than TDDB in determining the operating lifetime; 2) n-channel MOSFETs (nMOSFETs) are more vulnerable than p-channel MOSFETs (pMOSFETs); and 3) MOSFETs with polySi gates are more vulnerable than those with metal gates. These will be discussed in the context of existing electron/hole traps and trap generation by high-field stress. A novel technique to probe traps in ultrathin gate dielectrics, inelastic electron tunneling spectroscopy (IETS), will be shown to be capable of revealing the energies and locations of traps in high-k gate dielectrics.

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Special reliability features for Hf-based high-k gate dielectrics

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