Special Issue Papers on III-V Nitrides and Silicon Carbon

Ilesanmi Adesida (Editor)

Research output: Contribution to journalSpecial issue

Abstract

Due to the rapid advances in and the technical importance of III-V nitrides and
silicon carbide materials and devices, these topics represented the largest
component of the papers presented at the 42nd Electronic Materials Conference
(EMC) which was held at the University of Denver in Denver, Colorado, 21–23
June 2000. There were 54 presentations on III-V nitrides and 20 presentations
on SiC. A few of those presentations have been developed into papers that are
contained in this special issue along with other contributions from these fields
for a total of 24 papers. These papers cover the topics of epitaxy, characterization,
processing, and device applications. SiC and III-V nitrides will again be a major
emphasis at the 43rd EMC to be held 27–29 June 2001, at the University of Notre
Dame in South Bend, Indiana.
This is the seventh consecutive year for a special issue of the Journal of
Electronic Materials on III-V nitrides and SiC. Because of the continued interest
in these materials, there will again be a special issue in 2002. The tentative
deadline for submission of manuscripts will be August 1, 2001 and we are
targeting the March 2002 issue of the Journal of Electronic Materials for this
special issue. Details will be announced later in this journal and through
materials distributed for the 2001 EMC.
We would like to thank the authors, reviewers, and the Journal of Electronic
Materials for their efforts, which resulted in this special issue.
Original languageEnglish (US)
JournalJournal of Electronic Materials
Volume30
Issue number3
DOIs
StatePublished - Mar 2001
Event42nd Electronic Materials Conference - Denver, United States
Duration: Jun 21 2000Jun 23 2000

Fingerprint Dive into the research topics of 'Special Issue Papers on III-V Nitrides and Silicon Carbon'. Together they form a unique fingerprint.

  • Cite this