Abstract
Because of the rapid advances in and technical importance of III-V nitride
and SiC materials and devices, these topics represented the largest component
of the 41st Electronic Materials Conference (EMC) held in 1999 at the University
of California at Santa Barbara. A few of those presentations have been developed
into papers that are contained in this Special Issue along with other contributions from these fields for a total of 26 papers. These papers cover the topics of
epitaxy, characterization, processing, and device applications. This is the sixth
consecutive year for a Special Issue of the Journal of Electronic Materials on SiC
and III-V nitrides. We would like to thank the authors, reviewers, and the
Journal of Electronic Materials for their efforts, which resulted in this Special
Issue
and SiC materials and devices, these topics represented the largest component
of the 41st Electronic Materials Conference (EMC) held in 1999 at the University
of California at Santa Barbara. A few of those presentations have been developed
into papers that are contained in this Special Issue along with other contributions from these fields for a total of 26 papers. These papers cover the topics of
epitaxy, characterization, processing, and device applications. This is the sixth
consecutive year for a Special Issue of the Journal of Electronic Materials on SiC
and III-V nitrides. We would like to thank the authors, reviewers, and the
Journal of Electronic Materials for their efforts, which resulted in this Special
Issue
| Original language | English (US) |
|---|---|
| Journal | Journal of Electronic Materials |
| Volume | 29 |
| Issue number | 3 |
| DOIs | |
| State | Published - Mar 2000 |
| Event | 41st Electronic Materials Conference - Santa Barbara, United States Duration: Jun 30 1999 → Jul 2 1999 |