Spatially selective and reversible doping control in cuprate films

Seongshik Oh; Joseph A. Bonetti; Kevin Inderhees; D. J. Van Harlingen; J. N. Eckstein

doi:10.1063/1.2138356

Spatially selective and reversible doping control in cuprate films

Seongshik Oh, Joseph A. Bonetti, Kevin Inderhees, D. J. Van Harlingen, J. N. Eckstein

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We describe a reversible, spatially controlled doping method for cuprate films. The technique has been used to create superconductor-antiferromagnetic insulator-superconductor (S-AFI-S) junctions and optimally doped superconductor-underdoped superconductor-optimally doped superconductor cuprate structures. We demonstrate how the S-AFI-S structure can be employed to reliably measure the transport properties of the antiferromagnetic insulator region at cryogenic temperatures using the superconductors as seamless electrical leads. We also discuss applied and fundamental issues which may be addressed with the structures created with this doping method. Although it is implemented on a cuprate film (YBa2 Cu3 O7-δ) in this work, the method can also be applied to any mixed-valence transition metal oxide whose physical properties are determined by oxygen content.

Original language	English (US)
Article number	231911
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	23
DOIs	https://doi.org/10.1063/1.2138356
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2138356

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title = "Spatially selective and reversible doping control in cuprate films",

abstract = "We describe a reversible, spatially controlled doping method for cuprate films. The technique has been used to create superconductor-antiferromagnetic insulator-superconductor (S-AFI-S) junctions and optimally doped superconductor-underdoped superconductor-optimally doped superconductor cuprate structures. We demonstrate how the S-AFI-S structure can be employed to reliably measure the transport properties of the antiferromagnetic insulator region at cryogenic temperatures using the superconductors as seamless electrical leads. We also discuss applied and fundamental issues which may be addressed with the structures created with this doping method. Although it is implemented on a cuprate film (YBa2 Cu3 O7-δ) in this work, the method can also be applied to any mixed-valence transition metal oxide whose physical properties are determined by oxygen content.",

author = "Seongshik Oh and Bonetti, {Joseph A.} and Kevin Inderhees and {Van Harlingen}, {D. J.} and Eckstein, {J. N.}",

note = "Funding Information: The authors acknowledge support from the U. S. Office of Naval Research under Grant No. N00014-00-1-0840 and the U. S. Department of Energy, Basic Energy Sciences, through the Frederick Seitz Materials Research Laboratory Award No. DEFG02-91ER45439. ",

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T1 - Spatially selective and reversible doping control in cuprate films

AU - Oh, Seongshik

AU - Bonetti, Joseph A.

AU - Inderhees, Kevin

AU - Van Harlingen, D. J.

AU - Eckstein, J. N.

N1 - Funding Information: The authors acknowledge support from the U. S. Office of Naval Research under Grant No. N00014-00-1-0840 and the U. S. Department of Energy, Basic Energy Sciences, through the Frederick Seitz Materials Research Laboratory Award No. DEFG02-91ER45439.

PY - 2005

Y1 - 2005

N2 - We describe a reversible, spatially controlled doping method for cuprate films. The technique has been used to create superconductor-antiferromagnetic insulator-superconductor (S-AFI-S) junctions and optimally doped superconductor-underdoped superconductor-optimally doped superconductor cuprate structures. We demonstrate how the S-AFI-S structure can be employed to reliably measure the transport properties of the antiferromagnetic insulator region at cryogenic temperatures using the superconductors as seamless electrical leads. We also discuss applied and fundamental issues which may be addressed with the structures created with this doping method. Although it is implemented on a cuprate film (YBa2 Cu3 O7-δ) in this work, the method can also be applied to any mixed-valence transition metal oxide whose physical properties are determined by oxygen content.

AB - We describe a reversible, spatially controlled doping method for cuprate films. The technique has been used to create superconductor-antiferromagnetic insulator-superconductor (S-AFI-S) junctions and optimally doped superconductor-underdoped superconductor-optimally doped superconductor cuprate structures. We demonstrate how the S-AFI-S structure can be employed to reliably measure the transport properties of the antiferromagnetic insulator region at cryogenic temperatures using the superconductors as seamless electrical leads. We also discuss applied and fundamental issues which may be addressed with the structures created with this doping method. Although it is implemented on a cuprate film (YBa2 Cu3 O7-δ) in this work, the method can also be applied to any mixed-valence transition metal oxide whose physical properties are determined by oxygen content.

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Spatially selective and reversible doping control in cuprate films

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