Spatially Controlled Growth of Ultrathin MoO2 Polymorphs by Physical Vapor Deposition

Jacob Elkins, Sathvik Ajay Iyengar, Ojasvi Verma, Himanshu Shekhar, Kendra Khodabandehloo, Jingyi Zhou, Tymofii Pieshkov, Jishnu Murukeshan, Peter Nordlander, Aravind Krishnamoorthy, Stephan Link, Robert Vajtai, Anand Puthirath, Pulickel M. Ajayan

Research output: Contribution to journalArticlepeer-review

Abstract

Here we study the controlled growth of ultrathin molybdenum dioxide (MoO2) flakes, a metallic analogue of the widely studied transition metal dichalcogenide MoS2. This study demonstrates the growth of three distinct MoO2 polymorphs (monoclinic, tetragonal, and a newly identified hexagonal phase) using physical vapor deposition. Comprehensive characterization through atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy confirms their unique structures and validates the newly observed hexagonal polymorph, which is also supported through simulations. Computational modeling suggests that the nucleation and coalescence of gas-phase clusters drive the polymorph formation. Optical measurements reveal that these polymorphs exhibit distinct photonic resonances, influenced by their geometry and thickness. This work opens new possibilities for integrating MoO2 in hybrid structures and photonic devices, leveraging its polymorphic diversity and close relation to MoS2, for advanced material design.

Original languageEnglish (US)
Pages (from-to)2283-2289
Number of pages7
JournalNano letters
Volume25
Issue number6
DOIs
StatePublished - Feb 12 2025

Keywords

  • crystal growth
  • physical vapor deposition
  • polymorphs
  • transition metal oxides

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Spatially Controlled Growth of Ultrathin MoO2 Polymorphs by Physical Vapor Deposition'. Together they form a unique fingerprint.

Cite this