Space-time Galerkin/least-squares finite element formulation for the hydrodynamic device equations

N. R. Aluru, Kincho H. Law, Peter M. Pinsky, Arthur Raefsky, Ronald J.G. Goossens, Robert W. Dutton

Research output: Contribution to journalConference articlepeer-review


Numerical simulation of the hydrodynamic semiconductor device equations requires powerful numerical schemes. A Space-time Galerkin/Least-Squares finite element formulation, that has been successfully applied to problems of fluid dynamics, is proposed for the solution of the hydrodynamic device equations. Similarity between the equations of fluid dynamics and semiconductor devices is discussed. The robustness and accuracy of the numerical scheme are demonstrated with the example of a single electron carrier submicron silicon MESFET device.

Original languageEnglish (US)
Pages (from-to)227-235
Number of pages9
JournalIEICE Transactions on Electronics
Issue number2
StatePublished - Feb 1994
Externally publishedYes
EventProceedings of the VLSI Process and Device Modeling Workshop (VPAD93) - Nara, Jpn
Duration: May 14 1993May 15 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Space-time Galerkin/least-squares finite element formulation for the hydrodynamic device equations'. Together they form a unique fingerprint.

Cite this