Abstract
Numerical simulation of the hydrodynamic semiconductor device equations requires powerful numerical schemes. A Space-time Galerkin/Least-Squares finite element formulation, that has been successfully applied to problems of fluid dynamics, is proposed for the solution of the hydrodynamic device equations. Similarity between the equations of fluid dynamics and semiconductor devices is discussed. The robustness and accuracy of the numerical scheme are demonstrated with the example of a single electron carrier submicron silicon MESFET device.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 227-235 |
| Number of pages | 9 |
| Journal | IEICE Transactions on Electronics |
| Volume | E77-C |
| Issue number | 2 |
| State | Published - Feb 1994 |
| Externally published | Yes |
| Event | Proceedings of the VLSI Process and Device Modeling Workshop (VPAD93) - Nara, Jpn Duration: May 14 1993 → May 15 1993 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering