Source Contact Placement For Efficient ESD/EOS Protection In Grounded Substrate MOS Integrated Circuit

Sung Mo (Steve) Kang (Inventor), Carlos H Diaz (Inventor), Charvaka Duvvury (Inventor)

Research output: Patent

Abstract

An ESD/EOS protection circuit (100) for protecting an integrated circuit. A MOS transistor (102) is arranged in a multi-finger configuration having a plurality of drain regions (124), a plurality of source regions (122) and a plurality of gates (118). A first metal layer (162) substantially covers each of the drain regions (124) and is in contact with each of the drain regions (124) via drain contacts (130). A second metal layer (154) substantially covers each of the source regions (122) and is in contact with each of the source regions via source contacts (128). A plurality of source contacts (128) are located at a minimum distance from gates (118). Metal-to-metal contacts (160) connect a third metal layer (156) with the second metal layer (154) over each of the source regions (122).
Original languageEnglish (US)
U.S. patent number5404041
StatePublished - Apr 4 1995

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