Solar hydrogen production using epitaxial SrTiO3 on a GaAs photovoltaic

L. Kornblum; D. P. Fenning; J. Faucher; J. Hwang; A. Boni; M. G. Han; M. D. Morales-Acosta; Y. Zhu; E. I. Altman; M. L. Lee; C. H. Ahn; F. J. Walker; Y. Shao-Horn

doi:10.1039/c6ee03170f

Solar hydrogen production using epitaxial SrTiO₃ on a GaAs photovoltaic

L. Kornblum, D. P. Fenning, J. Faucher, J. Hwang, A. Boni, M. G. Han, M. D. Morales-Acosta, Y. Zhu, E. I. Altman, M. L. Lee, C. H. Ahn, F. J. Walker, Y. Shao-Horn

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate an oxide-stabilized III-V photoelectrode architecture for solar fuel production from water in neutral pH. For this tunable architecture we demonstrate 100% Faradaic efficiency for hydrogen evolution, and incident photon-to-current efficiencies (IPCE) exceeding 50%. High IPCE for hydrogen evolution is a consequence of the low-loss interface achieved via epitaxial growth of a thin oxide on a GaAs solar cell. Developing optimal energetic alignment across the interfaces of the photoelectrode using well-established III-V technology is key to obtaining high performance. This advance constitutes a critical milestone towards efficient, unassisted fuel production from solar energy.

Original language	English (US)
Pages (from-to)	377-382
Number of pages	6
Journal	Energy and Environmental Science
Volume	10
Issue number	1
DOIs	https://doi.org/10.1039/c6ee03170f
State	Published - Jan 2017

ASJC Scopus subject areas

Environmental Chemistry
Renewable Energy, Sustainability and the Environment
Nuclear Energy and Engineering
Pollution

Online availability

10.1039/c6ee03170f

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Cite this

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title = "Solar hydrogen production using epitaxial SrTiO3 on a GaAs photovoltaic",

abstract = "We demonstrate an oxide-stabilized III-V photoelectrode architecture for solar fuel production from water in neutral pH. For this tunable architecture we demonstrate 100% Faradaic efficiency for hydrogen evolution, and incident photon-to-current efficiencies (IPCE) exceeding 50%. High IPCE for hydrogen evolution is a consequence of the low-loss interface achieved via epitaxial growth of a thin oxide on a GaAs solar cell. Developing optimal energetic alignment across the interfaces of the photoelectrode using well-established III-V technology is key to obtaining high performance. This advance constitutes a critical milestone towards efficient, unassisted fuel production from solar energy.",

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AU - Kornblum, L.

AU - Fenning, D. P.

AU - Faucher, J.

AU - Hwang, J.

AU - Boni, A.

AU - Han, M. G.

AU - Morales-Acosta, M. D.

AU - Zhu, Y.

AU - Altman, E. I.

AU - Lee, M. L.

AU - Ahn, C. H.

AU - Walker, F. J.

AU - Shao-Horn, Y.

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