TY - JOUR
T1 - Sol-Gel derived Pb(Zr,Ti)O3 thin films
T2 - Residual stress and electrical properties
AU - Ong, R. J.
AU - Berfield, T. A.
AU - Sottos, N. R.
AU - Payne, D. A.
N1 - Funding Information:
The authors thank the National Science Foundation for support through grant CMS 00-8206. This material is based upon work supported by the U.S. Department of Energy, Division of Materials Sciences under Award No. DEFG02-91ER45439, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign. Research for this publication was carried out in the Center for Microanalysis of Materials, University of Illinois at Urbana-Champaign, which is partially supported by the U.S. Department of Energy under Award No. DEFG02-91-ER45439.
PY - 2005
Y1 - 2005
N2 - Pb(Zr,Ti)O3 compositions are under investigation for applications that include integrated capacitors, piezoelectric sensors, and actuators. Sol - Gel synthesis and spin coating are popular routes to the formation of high quality, dense, crack free, insulating films. However, the electrical properties of the films are often different than those measured for bulk specimens of the same composition. Pb(Zr0.53Ti0.47)O3 films were deposited from a 2-methoxyethanol based sol-gel system onto Pt/Ti/SiO2//Si substrates via spin-casting. Multiple layers were sequentially deposited and heat-treated to 650 °C with the use of a PbO overcoat to ensure complete perovskite phase formation. Film thickness was varied from 0.19 to 0.5 μm to study the effect of thickness and residual stress on the dielectric and piezoelectric properties of the polarizable and deformable material. Ex-situ wafer curvature measurements, combined with cross-sectional scanning electron microscopy, allowed for the determination of residual stresses in the thin films calculated by the Stoney equation. The macroscopic boundary conditions were then related to the measured properties of interest, namely dielectric constant, tan δ, and piezoelectric strain coefficient. Measured dielectric constants varied from ∼750 to ∼1000, while d33 values ranged from 30 to 44 pm/V, as determined by single-beam heterodyne laser interferometry measurements.
AB - Pb(Zr,Ti)O3 compositions are under investigation for applications that include integrated capacitors, piezoelectric sensors, and actuators. Sol - Gel synthesis and spin coating are popular routes to the formation of high quality, dense, crack free, insulating films. However, the electrical properties of the films are often different than those measured for bulk specimens of the same composition. Pb(Zr0.53Ti0.47)O3 films were deposited from a 2-methoxyethanol based sol-gel system onto Pt/Ti/SiO2//Si substrates via spin-casting. Multiple layers were sequentially deposited and heat-treated to 650 °C with the use of a PbO overcoat to ensure complete perovskite phase formation. Film thickness was varied from 0.19 to 0.5 μm to study the effect of thickness and residual stress on the dielectric and piezoelectric properties of the polarizable and deformable material. Ex-situ wafer curvature measurements, combined with cross-sectional scanning electron microscopy, allowed for the determination of residual stresses in the thin films calculated by the Stoney equation. The macroscopic boundary conditions were then related to the measured properties of interest, namely dielectric constant, tan δ, and piezoelectric strain coefficient. Measured dielectric constants varied from ∼750 to ∼1000, while d33 values ranged from 30 to 44 pm/V, as determined by single-beam heterodyne laser interferometry measurements.
KW - Dielectric properties
KW - Films
KW - Piezoelectric properties
KW - PZT
KW - Sol-Gel processes
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U2 - 10.1016/j.jeurceramsoc.2005.03.103
DO - 10.1016/j.jeurceramsoc.2005.03.103
M3 - Article
AN - SCOPUS:20444445110
SN - 0955-2219
VL - 25
SP - 2247
EP - 2251
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
IS - 12 SPEC. ISS.
ER -