Soft carrier multiplication by hot electrons in graphene

Anuj Girdhar, J. P. Leburton

Research output: Contribution to journalArticle

Abstract

By using the Boltzmann formalism, we show that carrier multiplication by impact ionization can take place at relatively low electric fields during electronic transport in graphene. Because of the absence of an energy gap, this effect is not characterized by a field threshold but is a quadratic function of the electric field, unlike in conventional semiconductors. We also show that the resulting current is an increasing function of the electronic temperature but decreases with increasing carrier concentration.

Original languageEnglish (US)
Article number043107
JournalApplied Physics Letters
Volume99
Issue number4
DOIs
StatePublished - Jul 25 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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