Sn debris cleaning by plasma in DPP EUV source systems for HVM

H. Shin, V. Surla, M. J. Neumann, D. N. Ruzic

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The tin (Sn) debris contamination is one of the technical challenges for the development of high power EUV light source with Sn fuel with a long lifetime of EUV collectors. The debris mitigation techniques (DMTs) can considerably minimize the Sn debris coming out of the source thereby reducing the need or effort for cleaning. However, for HVM, which requires higher EUV power output than today, it is questionable if the DMTs alone will completely eliminate the Sn contamination. Besides, at abnormal instances, we also need to clean thick Sn debris from the mirror surface. For this purpose, the Center for Plasma-Material Interactions (CPMI) at University of Illinois at Urbana-Champaign has developed a plasma-based Sn cleaning method using chlorine plasma with densities and temperature around ∼9×109/cm 3 and ∼ 4 eV respectively. From the previous studies at CPMI, it was shown that chlorine plasma etching can remove Sn debris from Ru mirror surface in a fast (> 400 nm/min) and in situ manner. In this study, we applied the same method to clean Sn contamination on the mock-up collector in our XTS13-35 DPP EUV source system. The mock-up is made of two shells with different gap widths (4 cm, 7.5 cm and 10 cm) in similar size with the actual collector optic. The cleaning rate at different locations on the mockup was experimentally investigated, and it was found that the cleaning rates vary largely with the distance from the chlorine plasma in the range of 20 - 100 nm/min. In addition, a simple analytical model to predict the cleaning rate was developed based on the plasma-surface reactions and the plasma transport. The model describes how plasma transport, chlorine radical distribution and pumping flow affect the Sn cleaning rate with chlorine plasma. Finally, the model is then compared to the experimental results and validated. Based on the knowledge of chlorine plasma and Sn interactions obtained in this study, a remote plasma cleaning technique was also investigated and the results obtained therein are presented. The experimental results along with the model predictions will help design an integrated cleaning system for collector optic in the high power EUV source system for HVM.

Original languageEnglish (US)
Title of host publicationExtreme Ultraviolet (EUV) Lithography
StatePublished - 2010
EventExtreme Ultraviolet (EUV) Lithography - San Jose, CA, United States
Duration: Feb 22 2010Feb 25 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherExtreme Ultraviolet (EUV) Lithography
Country/TerritoryUnited States
CitySan Jose, CA


  • EUV
  • Sn
  • chlorine
  • cleaning
  • collector
  • etching

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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