The present invention provides methods for making structures, including nanosized and microsized thin film structures that exhibit a high degree of smoothness useful for applications in microelectronics. Deposition processing of the invention utilize smoothing agents capable of selectively adjusting the relative rates of processes involved in thin film formation and growth to access enhanced nucleation densities resulting in smooth thin film structures, including ultrathin (e.g., <10 nm) smooth films.
|Original language||English (US)|
|U.S. patent number||8846146|
|State||Published - Sep 30 2014|