Small-signal performance and modeling of sub-50 nm nMOSFETs with fT above 460-GHz

V. Dimitrov, J. B. Heng, K. Timp, O. Dimauro, R. Chan, M. Hafez, J. Feng, T. Sorsch, W. Mansfield, J. Miner, A. Kornblit, F. Klemens, J. Bower, R. Cirelli, E. J. Ferry, A. Taylor, M. Feng, G. Timp

Research output: Contribution to journalArticlepeer-review


We have fabricated and tested the performance of sub-50 nm gate nMOSFETs to assess their suitability for mixed signal applications in the super high frequency (SHF) band, i.e. 3-30 GHz. For a 30 nm × 40 μm × 2 device, we found fT = 465 GHz at Vds = 2 V, Vg = 0.67 V, which is the highest cut-off frequency reported for a MOSFET produced on bulk silicon substrate so far. However, our measurements of fmax and noise figure indicate that parasitics impose limitations on SHF operation. We also present a high frequency ac model appropriate to sub-50 nm gate length nanotransistors, which incorporates the effects of the parasitics. The model accurately accounts for measurements of the S- and Y-parameters in the frequency range from 1 to 50 GHz.

Original languageEnglish (US)
Pages (from-to)899-908
Number of pages10
JournalSolid-State Electronics
Issue number6
StatePublished - Jun 2008


  • High frequency
  • Mixed signal
  • RF MOSFET modeling
  • Radio frequency (RF) MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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