Site-selective photoluminescence excitation and photoluminescence spectroscopy of Er-implanted wurtzite GaN

S. Kim, S. J. Rhee, D. A. Turnbull, Xiuling Li, J. J. Coleman, S. G. Bishop

Research output: Contribution to journalConference article

Abstract

Site-selective photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the ≈1540 nm 4I13/24I15/2 emissions of Er3+ in Er-implanted GaN. The PLE spectra exhibit several broad, below-gap, defect- or impurity-related absorption bands which excite three distinct site-selective Er3+ PL spectra. The near-band edge spectral position and lineshape of the PLE spectrum of one of the site-selective PL bands suggest that this Er site forms a trap level within the band gap and an exciton bound at this trap is involved in the excitation mechanism. In addition, high resolution PLE spectra obtained whh a tunable laser in the 810 nm spectral range reveal a set of sharp PLE peaks due to the 4I15/24I9/2 internal Er3+ f-band absorption superimposed on the broad defect PLE band. The site-selective PL spectrum exceed by the sharp line ≈810 nm Er3+ intra-f shell PLE bands is characteristic of a fourth distinct Er3+ site. The simple structure of the site-selective PL and PLE spectra associated with direct intra-fshell absorption suggests that the optically active Er site responsible for these spectra is of high symmetry in wurtzite GaN and that it could be attributed to a single Er atom on a Ga site.

Original languageEnglish (US)
Pages (from-to)131-136
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume468
StatePublished - Jan 1 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Mar 31 1997Apr 4 1997

Fingerprint

Photoluminescence spectroscopy
wurtzite
Photoluminescence
photoluminescence
spectroscopy
excitation
Absorption spectra
traps
absorption spectra
Defects
Laser tuning
defects
tunable lasers
Excitons
Energy gap

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Site-selective photoluminescence excitation and photoluminescence spectroscopy of Er-implanted wurtzite GaN. / Kim, S.; Rhee, S. J.; Turnbull, D. A.; Li, Xiuling; Coleman, J. J.; Bishop, S. G.

In: Materials Research Society Symposium - Proceedings, Vol. 468, 01.01.1997, p. 131-136.

Research output: Contribution to journalConference article

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abstract = "Site-selective photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the ≈1540 nm 4I13/2 → 4I15/2 emissions of Er3+ in Er-implanted GaN. The PLE spectra exhibit several broad, below-gap, defect- or impurity-related absorption bands which excite three distinct site-selective Er3+ PL spectra. The near-band edge spectral position and lineshape of the PLE spectrum of one of the site-selective PL bands suggest that this Er site forms a trap level within the band gap and an exciton bound at this trap is involved in the excitation mechanism. In addition, high resolution PLE spectra obtained whh a tunable laser in the 810 nm spectral range reveal a set of sharp PLE peaks due to the 4I15/2 → 4I9/2 internal Er3+ f-band absorption superimposed on the broad defect PLE band. The site-selective PL spectrum exceed by the sharp line ≈810 nm Er3+ intra-f shell PLE bands is characteristic of a fourth distinct Er3+ site. The simple structure of the site-selective PL and PLE spectra associated with direct intra-fshell absorption suggests that the optically active Er site responsible for these spectra is of high symmetry in wurtzite GaN and that it could be attributed to a single Er atom on a Ga site.",
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T1 - Site-selective photoluminescence excitation and photoluminescence spectroscopy of Er-implanted wurtzite GaN

AU - Kim, S.

AU - Rhee, S. J.

AU - Turnbull, D. A.

AU - Li, Xiuling

AU - Coleman, J. J.

AU - Bishop, S. G.

PY - 1997/1/1

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N2 - Site-selective photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the ≈1540 nm 4I13/2 → 4I15/2 emissions of Er3+ in Er-implanted GaN. The PLE spectra exhibit several broad, below-gap, defect- or impurity-related absorption bands which excite three distinct site-selective Er3+ PL spectra. The near-band edge spectral position and lineshape of the PLE spectrum of one of the site-selective PL bands suggest that this Er site forms a trap level within the band gap and an exciton bound at this trap is involved in the excitation mechanism. In addition, high resolution PLE spectra obtained whh a tunable laser in the 810 nm spectral range reveal a set of sharp PLE peaks due to the 4I15/2 → 4I9/2 internal Er3+ f-band absorption superimposed on the broad defect PLE band. The site-selective PL spectrum exceed by the sharp line ≈810 nm Er3+ intra-f shell PLE bands is characteristic of a fourth distinct Er3+ site. The simple structure of the site-selective PL and PLE spectra associated with direct intra-fshell absorption suggests that the optically active Er site responsible for these spectra is of high symmetry in wurtzite GaN and that it could be attributed to a single Er atom on a Ga site.

AB - Site-selective photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the ≈1540 nm 4I13/2 → 4I15/2 emissions of Er3+ in Er-implanted GaN. The PLE spectra exhibit several broad, below-gap, defect- or impurity-related absorption bands which excite three distinct site-selective Er3+ PL spectra. The near-band edge spectral position and lineshape of the PLE spectrum of one of the site-selective PL bands suggest that this Er site forms a trap level within the band gap and an exciton bound at this trap is involved in the excitation mechanism. In addition, high resolution PLE spectra obtained whh a tunable laser in the 810 nm spectral range reveal a set of sharp PLE peaks due to the 4I15/2 → 4I9/2 internal Er3+ f-band absorption superimposed on the broad defect PLE band. The site-selective PL spectrum exceed by the sharp line ≈810 nm Er3+ intra-f shell PLE bands is characteristic of a fourth distinct Er3+ site. The simple structure of the site-selective PL and PLE spectra associated with direct intra-fshell absorption suggests that the optically active Er site responsible for these spectra is of high symmetry in wurtzite GaN and that it could be attributed to a single Er atom on a Ga site.

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