Single-VDD and single-VT super-drowsy techniques for low-leakage high-performance instruction caches

Nam Sung Kim, Krisztián Flautner, David Blaauw, Trevor Mudge

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we present a circuit technique that supports a super-drowsy mode with a single-VDD. In addition, we perform a detailed working set analysis for various cache line update policies for placing lines in a drowsy state. The analysis presents a policy for an instruction cache and shows it is as good as or better than more complex schemes proposed in the past. Furthermore, as an alternative to using high-threshold devices to reduce the bitline leakage through access transistors in drowsy caches, we propose a gated bitline precharge technique. A single threshold process is now sufficient. The gated precharge employs a simple but effective predictor that almost completely hides any performance loss incurred by the transitions between sub-banks. A 64-entry predictor with 3 bits per entry reduces the run-time increase by 78%, which is as effective as previous proposals that used content addressable predictors with 40 bits per entry. Overall, the combination of the proposed techniques reduces the leakage power by 72% with negligible (0.4%) run-time increase.

Original languageEnglish (US)
Title of host publicationProceedings of the 2004 International Symposium on Lower Power Electronics and Design, ISLPED'04
PublisherAssociation for Computing Machinery
Pages54-57
Number of pages4
ISBN (Print)1581139292, 9781581139297
DOIs
StatePublished - 2004
Externally publishedYes
EventProceedings of the 2004 International Symposium on Lower Power Electronics and Design, ISLPED'04 - Newport Beach, CA, United States
Duration: Aug 9 2004Aug 11 2004

Publication series

NameProceedings of the 2004 International Symposium on Lower Power Electronics and Design, ISLPED'04

Other

OtherProceedings of the 2004 International Symposium on Lower Power Electronics and Design, ISLPED'04
Country/TerritoryUnited States
CityNewport Beach, CA
Period8/9/048/11/04

Keywords

  • Leakage current
  • Low power

ASJC Scopus subject areas

  • General Engineering

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