Single-Mode, Passive Antiguide Vertical Cavity Surface Emitting Laser

Y. A. Wu, G. S. Li, R. F. Nabiev, C. J. Chang-Hasnain, Kent D. Choquette, C. Caneau

Research output: Contribution to journalArticlepeer-review

Abstract

We report the characteristics of a single-mode, low threshold, passive antiguide region (PAR) vertical cavity surface emitting laser (VCSEL) using both organometallic chemical vapor deposition (OMCVD) and molecular beam epitaxy (MBE) for the regrowth of the PAR structure. The novel passive antiguide region surrounding the active region is demonstrated to be a highly effective transverse mode and polarization mode selection mechanism. A stable single fundamental mode at high currents has been achieved experimentally for laser aperture as large as 16 μm diameter. In addition, very low threshold current of 0.8 mA and current density of 490 A/cm2 are achieved with 8 and 32 μm diameter VCSEL's, respectively. A detailed numerical two- and three-dimensional analysis was performed using the beam propagation method. The modal losses were calculated as a function of the cladding refractive index and the laser size. Quantitative results leading to approximate formulae have been achieved. The high mode selectivity obtained from the numerical analysis is in good agreement with the experimental results we have achieved.

Original languageEnglish (US)
Pages (from-to)629-637
Number of pages9
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume1
Issue number2
DOIs
StatePublished - Jun 1995
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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