Single-Mode, Passive Antiguide Vertical Cavity Surface Emitting Laser

Y. A. Wu; G. S. Li; R. F. Nabiev; C. J. Chang-Hasnain; Kent D. Choquette; C. Caneau

doi:10.1109/2944.401251

Single-Mode, Passive Antiguide Vertical Cavity Surface Emitting Laser

Y. A. Wu, G. S. Li, R. F. Nabiev, C. J. Chang-Hasnain, Kent D. Choquette, C. Caneau

Research output: Contribution to journal › Article › peer-review

Abstract

We report the characteristics of a single-mode, low threshold, passive antiguide region (PAR) vertical cavity surface emitting laser (VCSEL) using both organometallic chemical vapor deposition (OMCVD) and molecular beam epitaxy (MBE) for the regrowth of the PAR structure. The novel passive antiguide region surrounding the active region is demonstrated to be a highly effective transverse mode and polarization mode selection mechanism. A stable single fundamental mode at high currents has been achieved experimentally for laser aperture as large as 16 μm diameter. In addition, very low threshold current of 0.8 mA and current density of 490 A/cm2 are achieved with 8 and 32 μm diameter VCSEL's, respectively. A detailed numerical two- and three-dimensional analysis was performed using the beam propagation method. The modal losses were calculated as a function of the cladding refractive index and the laser size. Quantitative results leading to approximate formulae have been achieved. The high mode selectivity obtained from the numerical analysis is in good agreement with the experimental results we have achieved.

Original language	English (US)
Pages (from-to)	629-637
Number of pages	9
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	1
Issue number	2
DOIs	https://doi.org/10.1109/2944.401251
State	Published - Jun 1995
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/2944.401251

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title = "Single-Mode, Passive Antiguide Vertical Cavity Surface Emitting Laser",

abstract = "We report the characteristics of a single-mode, low threshold, passive antiguide region (PAR) vertical cavity surface emitting laser (VCSEL) using both organometallic chemical vapor deposition (OMCVD) and molecular beam epitaxy (MBE) for the regrowth of the PAR structure. The novel passive antiguide region surrounding the active region is demonstrated to be a highly effective transverse mode and polarization mode selection mechanism. A stable single fundamental mode at high currents has been achieved experimentally for laser aperture as large as 16 μm diameter. In addition, very low threshold current of 0.8 mA and current density of 490 A/cm2 are achieved with 8 and 32 μm diameter VCSEL's, respectively. A detailed numerical two- and three-dimensional analysis was performed using the beam propagation method. The modal losses were calculated as a function of the cladding refractive index and the laser size. Quantitative results leading to approximate formulae have been achieved. The high mode selectivity obtained from the numerical analysis is in good agreement with the experimental results we have achieved.",

author = "Wu, {Y. A.} and Li, {G. S.} and Nabiev, {R. F.} and Chang-Hasnain, {C. J.} and Choquette, {Kent D.} and C. Caneau",

note = "Funding Information: Manuscript received November 17, 1994; revised February 14, 1995. This work was supported by the Joint Services Electronics Program N00012-89-K0067 and the Packard Foundation. Y. A. Wu, G. S. Li, R. F. Nabiev, and C. J. Chang-Hasnain are with E. L. Ginzton Lab, Stanford University, Stanford, CA 94305 USA. K. D. Choquette is with Sandia National Lab, Albuquerque, NM 87185. C. Caneau is with Bellcore, Redbank, NJ 07701 USA. IEEE Log Number 9411058.",

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AU - Wu, Y. A.

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AU - Nabiev, R. F.

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AU - Choquette, Kent D.

AU - Caneau, C.

N1 - Funding Information: Manuscript received November 17, 1994; revised February 14, 1995. This work was supported by the Joint Services Electronics Program N00012-89-K0067 and the Packard Foundation. Y. A. Wu, G. S. Li, R. F. Nabiev, and C. J. Chang-Hasnain are with E. L. Ginzton Lab, Stanford University, Stanford, CA 94305 USA. K. D. Choquette is with Sandia National Lab, Albuquerque, NM 87185. C. Caneau is with Bellcore, Redbank, NJ 07701 USA. IEEE Log Number 9411058.

PY - 1995/6

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N2 - We report the characteristics of a single-mode, low threshold, passive antiguide region (PAR) vertical cavity surface emitting laser (VCSEL) using both organometallic chemical vapor deposition (OMCVD) and molecular beam epitaxy (MBE) for the regrowth of the PAR structure. The novel passive antiguide region surrounding the active region is demonstrated to be a highly effective transverse mode and polarization mode selection mechanism. A stable single fundamental mode at high currents has been achieved experimentally for laser aperture as large as 16 μm diameter. In addition, very low threshold current of 0.8 mA and current density of 490 A/cm2 are achieved with 8 and 32 μm diameter VCSEL's, respectively. A detailed numerical two- and three-dimensional analysis was performed using the beam propagation method. The modal losses were calculated as a function of the cladding refractive index and the laser size. Quantitative results leading to approximate formulae have been achieved. The high mode selectivity obtained from the numerical analysis is in good agreement with the experimental results we have achieved.

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Single-Mode, Passive Antiguide Vertical Cavity Surface Emitting Laser

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