Single-junction GaAsP solar cells grown on SiGe graded buffers on Si

J. Faucher; A. Gerger; S. Tomasulo; C. Ebert; A. Lochtefeld; A. Barnett; M. L. Lee

doi:10.1063/1.4828879

Single-junction GaAsP solar cells grown on SiGe graded buffers on Si

J. Faucher, A. Gerger, S. Tomasulo, C. Ebert, A. Lochtefeld, A. Barnett, M. L. Lee

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated the microstructure and device characteristics of GaAs_0.82P_0.18 solar cells grown on Si _0.20Ge_0.80/Si graded buffers. Anti-phase domains (APDs) were largely self-annihilated within the In_0.39Ga_0.61P initiation layer although a low density of APDs was found to propagate to the surface. A combination of techniques was used to show that the GaAs _0.82P_0.18 cells have a threading dislocation density of 1.2 ± 0.2 × 10⁷ cm^-2. Despite these extended defects, the devices exhibited high open-circuit voltages of 1.10-1.12 V. These results indicate that cascading a GaAs_0.82P_0.18 top cell with a lower-bandgap Si_0.20Ge_0.80 cell is a promising approach for high-efficiency dual-junction devices on low-cost Si substrates.

Original language	English (US)
Article number	191901
Journal	Applied Physics Letters
Volume	103
Issue number	19
DOIs	https://doi.org/10.1063/1.4828879
State	Published - Nov 4 2013
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.4828879

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title = "Single-junction GaAsP solar cells grown on SiGe graded buffers on Si",

abstract = "We have investigated the microstructure and device characteristics of GaAs0.82P0.18 solar cells grown on Si 0.20Ge0.80/Si graded buffers. Anti-phase domains (APDs) were largely self-annihilated within the In0.39Ga0.61P initiation layer although a low density of APDs was found to propagate to the surface. A combination of techniques was used to show that the GaAs 0.82P0.18 cells have a threading dislocation density of 1.2 ± 0.2 × 107 cm-2. Despite these extended defects, the devices exhibited high open-circuit voltages of 1.10-1.12 V. These results indicate that cascading a GaAs0.82P0.18 top cell with a lower-bandgap Si0.20Ge0.80 cell is a promising approach for high-efficiency dual-junction devices on low-cost Si substrates.",

author = "J. Faucher and A. Gerger and S. Tomasulo and C. Ebert and A. Lochtefeld and A. Barnett and Lee, {M. L.}",

note = "Funding Information: We gratefully acknowledge the Australian Solar Institute and United States-Australia Solar Energy Collaboration. Facilities used were supported by Yale Institute for Nanoscience and Quantum Engineering and NSF MRSEC DMR 1119826. Research carried out in part at the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886. J.F. and M.L.L. acknowledge support from the NSF CAREER program (Grant No. DMR-09559616). ",

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AU - Faucher, J.

AU - Gerger, A.

AU - Tomasulo, S.

AU - Ebert, C.

AU - Lochtefeld, A.

AU - Barnett, A.

AU - Lee, M. L.

N1 - Funding Information: We gratefully acknowledge the Australian Solar Institute and United States-Australia Solar Energy Collaboration. Facilities used were supported by Yale Institute for Nanoscience and Quantum Engineering and NSF MRSEC DMR 1119826. Research carried out in part at the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886. J.F. and M.L.L. acknowledge support from the NSF CAREER program (Grant No. DMR-09559616).

PY - 2013/11/4

Y1 - 2013/11/4

N2 - We have investigated the microstructure and device characteristics of GaAs0.82P0.18 solar cells grown on Si 0.20Ge0.80/Si graded buffers. Anti-phase domains (APDs) were largely self-annihilated within the In0.39Ga0.61P initiation layer although a low density of APDs was found to propagate to the surface. A combination of techniques was used to show that the GaAs 0.82P0.18 cells have a threading dislocation density of 1.2 ± 0.2 × 107 cm-2. Despite these extended defects, the devices exhibited high open-circuit voltages of 1.10-1.12 V. These results indicate that cascading a GaAs0.82P0.18 top cell with a lower-bandgap Si0.20Ge0.80 cell is a promising approach for high-efficiency dual-junction devices on low-cost Si substrates.

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Single-junction GaAsP solar cells grown on SiGe graded buffers on Si

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