Abstract

The average effect of a single 500 eV incident argon ion on a silicon surface is studied using molecular dynamics simulations. More than 103 ion impacts at random surface points are averaged for each of seven incidence angles, from 0° to 28° off normal, to determine a local surface height change function, or a crater function. The crater shapes are mostly determined by mass rearrangement; sputtering has a relatively small effect. Analytical fitting functions are provided for several cases, and may serve as input into kinetic Monte Carlo calculations or stability analyses for surfaces subjected to ion bombardment.

Original languageEnglish (US)
Article number131909
JournalApplied Physics Letters
Volume92
Issue number13
DOIs
StatePublished - Apr 10 2008

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craters
bombardment
silicon
ions
ion impact
incidence
sputtering
argon
molecular dynamics
kinetics
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Single impact crater functions for ion bombardment of silicon. / Kalyanasundaram, N.; Ghazisaeidi, M.; Freund, J. B.; Johnson, H. T.

In: Applied Physics Letters, Vol. 92, No. 13, 131909, 10.04.2008.

Research output: Contribution to journalArticle

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