Single impact crater functions for ion bombardment of silicon

N. Kalyanasundaram; M. Ghazisaeidi; J. B. Freund; H. T. Johnson

doi:10.1063/1.2905297

Single impact crater functions for ion bombardment of silicon

N. Kalyanasundaram, M. Ghazisaeidi, J. B. Freund, H. T. Johnson

Research output: Contribution to journal › Article › peer-review

Abstract

The average effect of a single 500 eV incident argon ion on a silicon surface is studied using molecular dynamics simulations. More than 103 ion impacts at random surface points are averaged for each of seven incidence angles, from 0° to 28° off normal, to determine a local surface height change function, or a crater function. The crater shapes are mostly determined by mass rearrangement; sputtering has a relatively small effect. Analytical fitting functions are provided for several cases, and may serve as input into kinetic Monte Carlo calculations or stability analyses for surfaces subjected to ion bombardment.

Original language	English (US)
Article number	131909
Journal	Applied Physics Letters
Volume	92
Issue number	13
DOIs	https://doi.org/10.1063/1.2905297
State	Published - 2008

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Physics and Astronomy (miscellaneous)

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10.1063/1.2905297

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AU - Johnson, H. T.

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AB - The average effect of a single 500 eV incident argon ion on a silicon surface is studied using molecular dynamics simulations. More than 103 ion impacts at random surface points are averaged for each of seven incidence angles, from 0° to 28° off normal, to determine a local surface height change function, or a crater function. The crater shapes are mostly determined by mass rearrangement; sputtering has a relatively small effect. Analytical fitting functions are provided for several cases, and may serve as input into kinetic Monte Carlo calculations or stability analyses for surfaces subjected to ion bombardment.

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Single impact crater functions for ion bombardment of silicon

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