Single gate p-n junctions in graphene-ferroelectric devices

J. Henry Hinnefeld, Ruijuan Xu, Steven Rogers, Shishir Pandya, Moonsub Shim, Lane W. Martin, Nadya Mason

Research output: Contribution to journalArticle

Abstract

Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport measurements of graphene p-n junctions formed via simple modifications to a PbZr0.2Ti0.8O3 substrate, combined with a self-assembled layer of ambient environmental dopants. We show that the substrate configuration controls the local doping region, and that the p-n junction behavior can be controlled with a single gate. Finally, we show that the ferroelectric substrate induces a hysteresis in the environmental doping which can be utilized to activate and deactivate the doping, yielding an "on-demand" p-n junction in graphene controlled by a single, universal backgate.

Original languageEnglish (US)
Article number203109
JournalApplied Physics Letters
Volume108
Issue number20
DOIs
StatePublished - May 16 2016

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p-n junctions
graphene
hysteresis
configurations
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hinnefeld, J. H., Xu, R., Rogers, S., Pandya, S., Shim, M., Martin, L. W., & Mason, N. (2016). Single gate p-n junctions in graphene-ferroelectric devices. Applied Physics Letters, 108(20), [203109]. https://doi.org/10.1063/1.4950975

Single gate p-n junctions in graphene-ferroelectric devices. / Hinnefeld, J. Henry; Xu, Ruijuan; Rogers, Steven; Pandya, Shishir; Shim, Moonsub; Martin, Lane W.; Mason, Nadya.

In: Applied Physics Letters, Vol. 108, No. 20, 203109, 16.05.2016.

Research output: Contribution to journalArticle

Hinnefeld, JH, Xu, R, Rogers, S, Pandya, S, Shim, M, Martin, LW & Mason, N 2016, 'Single gate p-n junctions in graphene-ferroelectric devices', Applied Physics Letters, vol. 108, no. 20, 203109. https://doi.org/10.1063/1.4950975
Hinnefeld JH, Xu R, Rogers S, Pandya S, Shim M, Martin LW et al. Single gate p-n junctions in graphene-ferroelectric devices. Applied Physics Letters. 2016 May 16;108(20). 203109. https://doi.org/10.1063/1.4950975
Hinnefeld, J. Henry ; Xu, Ruijuan ; Rogers, Steven ; Pandya, Shishir ; Shim, Moonsub ; Martin, Lane W. ; Mason, Nadya. / Single gate p-n junctions in graphene-ferroelectric devices. In: Applied Physics Letters. 2016 ; Vol. 108, No. 20.
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