Single gate p-n junctions in graphene-ferroelectric devices

J. Henry Hinnefeld, Ruijuan Xu, Steven Rogers, Shishir Pandya, Moonsub Shim, Lane W. Martin, Nadya Mason

Research output: Contribution to journalArticle


Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport measurements of graphene p-n junctions formed via simple modifications to a PbZr0.2Ti0.8O3 substrate, combined with a self-assembled layer of ambient environmental dopants. We show that the substrate configuration controls the local doping region, and that the p-n junction behavior can be controlled with a single gate. Finally, we show that the ferroelectric substrate induces a hysteresis in the environmental doping which can be utilized to activate and deactivate the doping, yielding an "on-demand" p-n junction in graphene controlled by a single, universal backgate.

Original languageEnglish (US)
Article number203109
JournalApplied Physics Letters
Issue number20
StatePublished - May 16 2016

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Hinnefeld, J. H., Xu, R., Rogers, S., Pandya, S., Shim, M., Martin, L. W., & Mason, N. (2016). Single gate p-n junctions in graphene-ferroelectric devices. Applied Physics Letters, 108(20), [203109].