Single crystal and polycrystalline CuInSe2 by the hybrid sputtering and evaporation method

L. Chung Yang, L. J. Chou, A. Agarwal, A. Rockett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Polycrystalline and single-crystal CuInSe2 has been grown by the hybrid sputtering and evaporation process. Cells were 0.08 cm2. The maximum conversion efficiency recorded was 8.4% with Voc = 392 mV, JSC = 33.9 mA, and a fill factor of 63.1%. Single-crystal CuInSe2 thin films were deposited on GaAs (001)- and (111)-oriented substrates and exhibited (002) and (112) surface orientations, respectively. The single crystals exhibit evidence for faceting on (112)-type planes with a clear preference for one of the sets of planes over the other. The tendency to form facets depends on both the substrate surface preparation and the film stoichiometry.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherPubl by IEEE
Pages1185-1189
Number of pages5
ISBN (Print)0879426365
StatePublished - Jan 1 1992
EventConference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991 - Las Vegas, NV, USA
Duration: Oct 7 1991Oct 11 1991

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2
ISSN (Print)0160-8371

Other

OtherConference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991
CityLas Vegas, NV, USA
Period10/7/9110/11/91

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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