Simultaneous enhancement of current and breakdown voltage in AlGaN / GaN MOSHEMTs using sputtered / PECVD gate-dielectrics

Liang Pang, Kyekyoon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new SiO 2-deposition scheme combining radio frequency (rf) magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) has been developed to produce gate-SiO 2 for GaN-based metal-oxide-semiconductor high electron-mobility-transistors (MOSHEMTs). The high-density sputtered-SiO 2 was employed to suppress the gate leakage current while the low-density PECVD-SiO 2 was used to protect the sputtering damage, and also to increase the drain current via stress-induced-polarizations. Thus-obtained MOSHEMT exhibited a drain current of over 100 mA and a gate leakage current of 4.2 nA/mm. A high breakdown voltage of 634 V was achieved for a short gate-drain length of 6 μm, showing the promise of the new SiO 2-deposition scheme for the fabrication of GaN-based MOSHEMTs for high-power applications.

Original languageEnglish (US)
Title of host publication2012 IEEE Power and Energy Conference at Illinois, PECI 2012
DOIs
StatePublished - 2012
Event2012 IEEE Power and Energy Conference at Illinois, PECI 2012 - Champaign, IL, United States
Duration: Feb 24 2012Feb 25 2012

Other

Other2012 IEEE Power and Energy Conference at Illinois, PECI 2012
CountryUnited States
CityChampaign, IL
Period2/24/122/25/12

Keywords

  • AlGaN / GaN MOSHEMT
  • bimodal gate-SiO
  • breakdown voltage
  • rf sputtering

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Fuel Technology

Fingerprint Dive into the research topics of 'Simultaneous enhancement of current and breakdown voltage in AlGaN / GaN MOSHEMTs using sputtered / PECVD gate-dielectrics'. Together they form a unique fingerprint.

  • Cite this