Simultaneous enhancement of current and breakdown voltage in AlGaN / GaN MOSHEMTs using sputtered / PECVD gate-dielectrics

Liang Pang, Kyekyoon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new SiO 2-deposition scheme combining radio frequency (rf) magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) has been developed to produce gate-SiO 2 for GaN-based metal-oxide-semiconductor high electron-mobility-transistors (MOSHEMTs). The high-density sputtered-SiO 2 was employed to suppress the gate leakage current while the low-density PECVD-SiO 2 was used to protect the sputtering damage, and also to increase the drain current via stress-induced-polarizations. Thus-obtained MOSHEMT exhibited a drain current of over 100 mA and a gate leakage current of 4.2 nA/mm. A high breakdown voltage of 634 V was achieved for a short gate-drain length of 6 μm, showing the promise of the new SiO 2-deposition scheme for the fabrication of GaN-based MOSHEMTs for high-power applications.

Original languageEnglish (US)
Title of host publication2012 IEEE Power and Energy Conference at Illinois, PECI 2012
DOIs
StatePublished - 2012
Event2012 IEEE Power and Energy Conference at Illinois, PECI 2012 - Champaign, IL, United States
Duration: Feb 24 2012Feb 25 2012

Other

Other2012 IEEE Power and Energy Conference at Illinois, PECI 2012
CountryUnited States
CityChampaign, IL
Period2/24/122/25/12

Fingerprint

Gate dielectrics
High electron mobility transistors
Plasma enhanced chemical vapor deposition
Electric breakdown
Drain current
Leakage currents
Metals
Magnetron sputtering
Sputtering
Polarization
Fabrication
Oxide semiconductors

Keywords

  • AlGaN / GaN MOSHEMT
  • bimodal gate-SiO
  • breakdown voltage
  • rf sputtering

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Fuel Technology

Cite this

Simultaneous enhancement of current and breakdown voltage in AlGaN / GaN MOSHEMTs using sputtered / PECVD gate-dielectrics. / Pang, Liang; Kim, Kyekyoon.

2012 IEEE Power and Energy Conference at Illinois, PECI 2012. 2012. 6184602.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pang, L & Kim, K 2012, Simultaneous enhancement of current and breakdown voltage in AlGaN / GaN MOSHEMTs using sputtered / PECVD gate-dielectrics. in 2012 IEEE Power and Energy Conference at Illinois, PECI 2012., 6184602, 2012 IEEE Power and Energy Conference at Illinois, PECI 2012, Champaign, IL, United States, 2/24/12. https://doi.org/10.1109/PECI.2012.6184602
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N2 - A new SiO 2-deposition scheme combining radio frequency (rf) magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) has been developed to produce gate-SiO 2 for GaN-based metal-oxide-semiconductor high electron-mobility-transistors (MOSHEMTs). The high-density sputtered-SiO 2 was employed to suppress the gate leakage current while the low-density PECVD-SiO 2 was used to protect the sputtering damage, and also to increase the drain current via stress-induced-polarizations. Thus-obtained MOSHEMT exhibited a drain current of over 100 mA and a gate leakage current of 4.2 nA/mm. A high breakdown voltage of 634 V was achieved for a short gate-drain length of 6 μm, showing the promise of the new SiO 2-deposition scheme for the fabrication of GaN-based MOSHEMTs for high-power applications.

AB - A new SiO 2-deposition scheme combining radio frequency (rf) magnetron sputtering and plasma enhanced chemical vapor deposition (PECVD) has been developed to produce gate-SiO 2 for GaN-based metal-oxide-semiconductor high electron-mobility-transistors (MOSHEMTs). The high-density sputtered-SiO 2 was employed to suppress the gate leakage current while the low-density PECVD-SiO 2 was used to protect the sputtering damage, and also to increase the drain current via stress-induced-polarizations. Thus-obtained MOSHEMT exhibited a drain current of over 100 mA and a gate leakage current of 4.2 nA/mm. A high breakdown voltage of 634 V was achieved for a short gate-drain length of 6 μm, showing the promise of the new SiO 2-deposition scheme for the fabrication of GaN-based MOSHEMTs for high-power applications.

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