TY - JOUR
T1 - Simultaneous electrical, electrochemical, and optical relaxation measurements of oxygen surface exchange coefficients
T2 - Sr(Ti,Fe)O3-d film crystallization case study
AU - Perry, Nicola H.
AU - Skiba, Emily J.
AU - Chen, Ting
N1 - Funding Information:
N.H.P. and E.J.S. gratefully acknowledge financial support from the U.S. Department of Energy, Basic Energy Sciences through a DOE Early Career Award (grant #DE-SC0018963). E.J.S. acknowledges an IIE-GIRE Fellowship (supported by NSF, under Grant no. 1829436) that supported a research exchange visit to Kyushu University to enhance collaboration on this work. Structural and chemical analysis of films was carried out in the Materials Research Laboratory Central Research Facilities, University of Illinois. E.J.S. and T.C. also acknowledge the International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), supported by MEXT, Japan.
Funding Information:
U.S. Department of Energy, Basic Energy Sciences (grant #DE-SC0018963). IIE-GIRE Fellowship (supported by NSF, under Grant no. 1829436)
Publisher Copyright:
© 2020 American Chemical Society.
PY - 2020/10/28
Y1 - 2020/10/28
N2 - The oxygen surface exchange coefficient (k) dictates the efficiency and response time of many mixed conductors, so its accurate, continuous measurement in realistic conditions, enabling rational tailoring, is necessary. However, recent results showed that k values determined by a thin-film optical transmission relaxation (OTR) method were orders of magnitude lower than those extracted from the cross-cell AC-impedance spectroscopy (AC-IS) approach, and similar discrepancies among methods exist in the literature. OTR has also detected dramatic increases in k in situ during crystallization. Therefore, in this work, we sought to establish whether k values from OTR are reliable, and to gain further insight into crystallization-induced changes, via comparison to the electrical conductivity relaxation (ECR) method. We performed simultaneous OTR and ECR measurements on the same region of an as-grown amorphous SrTi0.65Fe0.35O2.825+δ (STF) film, prepared by pulsed laser deposition and characterized by Rutherford backscattering spectrometry, during thermal treatment to induce crystallization and a large increase in k. We also compared cross-cell AC-IS vs OTR on an as-grown amorphous film during crystallization and OTR vs ECR on a crystalline-grown film. Simultaneous measurements eliminate variability in k between samples or due to different thermal/gas history. OTR and ECR methods yielded the same k values, and the same crystallization temperature, within error. Both isothermal optical absorption and electrical conductivity changes are proportional to the hole and oxygen concentration changes under the conditions of this study. However, while OTR was able to measure optical absorption changes under all of the conditions tested, ECR was not viable in the high-resistance regime. Cross-cell AC-IS k values were elevated vs OTR values, were less stable over time, and were only accessible in limited conditions. We discuss the potential impacts of current collectors and oxygen exchange driving force on k values determined by cross-cell AC-IS vs ECR vs OTR.
AB - The oxygen surface exchange coefficient (k) dictates the efficiency and response time of many mixed conductors, so its accurate, continuous measurement in realistic conditions, enabling rational tailoring, is necessary. However, recent results showed that k values determined by a thin-film optical transmission relaxation (OTR) method were orders of magnitude lower than those extracted from the cross-cell AC-impedance spectroscopy (AC-IS) approach, and similar discrepancies among methods exist in the literature. OTR has also detected dramatic increases in k in situ during crystallization. Therefore, in this work, we sought to establish whether k values from OTR are reliable, and to gain further insight into crystallization-induced changes, via comparison to the electrical conductivity relaxation (ECR) method. We performed simultaneous OTR and ECR measurements on the same region of an as-grown amorphous SrTi0.65Fe0.35O2.825+δ (STF) film, prepared by pulsed laser deposition and characterized by Rutherford backscattering spectrometry, during thermal treatment to induce crystallization and a large increase in k. We also compared cross-cell AC-IS vs OTR on an as-grown amorphous film during crystallization and OTR vs ECR on a crystalline-grown film. Simultaneous measurements eliminate variability in k between samples or due to different thermal/gas history. OTR and ECR methods yielded the same k values, and the same crystallization temperature, within error. Both isothermal optical absorption and electrical conductivity changes are proportional to the hole and oxygen concentration changes under the conditions of this study. However, while OTR was able to measure optical absorption changes under all of the conditions tested, ECR was not viable in the high-resistance regime. Cross-cell AC-IS k values were elevated vs OTR values, were less stable over time, and were only accessible in limited conditions. We discuss the potential impacts of current collectors and oxygen exchange driving force on k values determined by cross-cell AC-IS vs ECR vs OTR.
KW - Crystallization
KW - Electrical conductivity relaxation
KW - Impedance spectroscopy
KW - Optical transmission relaxation
KW - Perovskite
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U2 - 10.1021/acsami.0c14265
DO - 10.1021/acsami.0c14265
M3 - Article
C2 - 33075221
AN - SCOPUS:85094932664
SN - 1944-8244
VL - 12
SP - 48614
EP - 48630
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 43
ER -