Simulator-independent compact modeling of vertical npn transistors for ESD and RF circuit simulation

Sopan Joshi, Elyse Rosenbaum

Research output: Contribution to journalArticlepeer-review

Abstract

We present an easy-to-use, simulator-independent compact model of a vertical npn transistor suitable for ESD circuit simulation. In addition to including high-current and breakdown effects, we also model accurately the small-signal off-state impedance of the device using s-parameter measurements, for inclusion in RF circuit simulations. Experimental results are provided for silicon and SiGe npn transistors.

Original languageEnglish (US)
Pages (from-to)1021-1027
Number of pages7
JournalMicroelectronics Reliability
Volume43
Issue number7
DOIs
StatePublished - Jul 1 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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