Simulations of quantum confinement in self-assembled InAs/GaAs island quantum dot arrays

Keyphrases

• Gallium Arsenide 100%
• Wave Function 100%
• Quantum Confinement 100%
• Quantum Dot Arrays 100%
• Banded Structure 50%
• Density of States 50%
• Size-and-shape 50%
• Charge Carriers 50%
• Electronic Properties 50%
• Electronic Structure 50%
• Structure-property Relationships 50%
• Energy Separation 50%
• GaAs Substrate 50%
• Electron States 50%
• Inhomogeneous Broadening 50%
• Strain Energy 50%
• Hole State 50%
• Function Coupling 50%
• Wetting Layer 50%
• Finite Element Approach 50%
• Single Charge 50%
• Island Formation 50%
• Photoemission Spectra 50%
• Photoluminescence Properties 50%
• Diffusive Mass Transport 50%
• Finite Element Mesh 50%
• Shape Variation 50%
• Size Variation 50%
• Property Analysis 50%
• Self-assembled InAs Quantum Dots 50%
• Hamiltonian Formulation 50%
• Energy-driven 50%
• Island Evolution 50%

Engineering

• Gallium Arsenide 100%
• Quantum Dot 100%
• Quantum Confinement 100%
• Energy Engineering 50%
• Finite Element Method 50%
• Band Structure 50%
• Charge Carrier 50%
• Mass Transfer 50%
• Broadening 50%
• Photoemission 50%
• Diffusive 50%
• Gaas Substrate 50%
• Energy Separation 50%
• Strain Energy 50%
• Finite Element Mesh 50%
• Layer State 50%
• Hamiltonian Formulation 50%

Material Science

• Finite Element Method 100%
• Gallium Arsenide 100%
• Quantum Dot 100%
• Density 50%
• Electronic Structure 50%
• Charge Carrier 50%
• Electronic Property 50%
• Photoluminescence 50%