Simulations of quantum confinement in self-assembled InAs/GaAs island quantum dot arrays

H. T. Johnson, V. Nguyen, A. F. Bower

Research output: Contribution to journalArticle

Abstract

Quantum confinement and photoluminescence properties of self-assembled InAs quantum dot arrays on GaAs substrates are studied theoretically using a coupled morphology/electronic structure finite element approach. Simulations of island evolution due to strain energy driven diffusive mass transport are first used to generate realistic island arrays. The resulting finite element meshes are input to a continuum, single charge-carrier model in which band structure properties are prescribed using a k·p Hamiltonian formulation. The results of the electronic properties analysis are spectra of electron and hole energies and corresponding wave functions. The electron and hole states have characteristics unique to arrays, the most prominent of which are the energy separations due to size and shape variations among dots in the array. This feature is shown to lead directly to inhomogeneous broadening in the photoemission spectra. Other phenomena observed here include the onset of a discrete density of states at the point of island formation during growth; the presence of states with wave functions coupling multiple dots in the array; and the nature of wetting layer states in the system.

Original languageEnglish (US)
Pages (from-to)J1.9.1-J1.9.6
JournalMaterials Research Society Symposium - Proceedings
Volume642
StatePublished - Jan 1 2001

Fingerprint

Quantum confinement
Wave functions
Semiconductor quantum dots
quantum dots
Hamiltonians
Electrons
Photoemission
Strain energy
Charge carriers
Electronic properties
Band structure
Spectrum analysis
Electronic structure
Wetting
Photoluminescence
Mass transfer
simulation
wave functions
Substrates
electron states

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Simulations of quantum confinement in self-assembled InAs/GaAs island quantum dot arrays. / Johnson, H. T.; Nguyen, V.; Bower, A. F.

In: Materials Research Society Symposium - Proceedings, Vol. 642, 01.01.2001, p. J1.9.1-J1.9.6.

Research output: Contribution to journalArticle

@article{b63529d6522946878f01ec14207af06a,
title = "Simulations of quantum confinement in self-assembled InAs/GaAs island quantum dot arrays",
abstract = "Quantum confinement and photoluminescence properties of self-assembled InAs quantum dot arrays on GaAs substrates are studied theoretically using a coupled morphology/electronic structure finite element approach. Simulations of island evolution due to strain energy driven diffusive mass transport are first used to generate realistic island arrays. The resulting finite element meshes are input to a continuum, single charge-carrier model in which band structure properties are prescribed using a k·p Hamiltonian formulation. The results of the electronic properties analysis are spectra of electron and hole energies and corresponding wave functions. The electron and hole states have characteristics unique to arrays, the most prominent of which are the energy separations due to size and shape variations among dots in the array. This feature is shown to lead directly to inhomogeneous broadening in the photoemission spectra. Other phenomena observed here include the onset of a discrete density of states at the point of island formation during growth; the presence of states with wave functions coupling multiple dots in the array; and the nature of wetting layer states in the system.",
author = "Johnson, {H. T.} and V. Nguyen and Bower, {A. F.}",
year = "2001",
month = "1",
day = "1",
language = "English (US)",
volume = "642",
pages = "J1.9.1--J1.9.6",
journal = "Materials Research Society Symposium Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Simulations of quantum confinement in self-assembled InAs/GaAs island quantum dot arrays

AU - Johnson, H. T.

AU - Nguyen, V.

AU - Bower, A. F.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Quantum confinement and photoluminescence properties of self-assembled InAs quantum dot arrays on GaAs substrates are studied theoretically using a coupled morphology/electronic structure finite element approach. Simulations of island evolution due to strain energy driven diffusive mass transport are first used to generate realistic island arrays. The resulting finite element meshes are input to a continuum, single charge-carrier model in which band structure properties are prescribed using a k·p Hamiltonian formulation. The results of the electronic properties analysis are spectra of electron and hole energies and corresponding wave functions. The electron and hole states have characteristics unique to arrays, the most prominent of which are the energy separations due to size and shape variations among dots in the array. This feature is shown to lead directly to inhomogeneous broadening in the photoemission spectra. Other phenomena observed here include the onset of a discrete density of states at the point of island formation during growth; the presence of states with wave functions coupling multiple dots in the array; and the nature of wetting layer states in the system.

AB - Quantum confinement and photoluminescence properties of self-assembled InAs quantum dot arrays on GaAs substrates are studied theoretically using a coupled morphology/electronic structure finite element approach. Simulations of island evolution due to strain energy driven diffusive mass transport are first used to generate realistic island arrays. The resulting finite element meshes are input to a continuum, single charge-carrier model in which band structure properties are prescribed using a k·p Hamiltonian formulation. The results of the electronic properties analysis are spectra of electron and hole energies and corresponding wave functions. The electron and hole states have characteristics unique to arrays, the most prominent of which are the energy separations due to size and shape variations among dots in the array. This feature is shown to lead directly to inhomogeneous broadening in the photoemission spectra. Other phenomena observed here include the onset of a discrete density of states at the point of island formation during growth; the presence of states with wave functions coupling multiple dots in the array; and the nature of wetting layer states in the system.

UR - http://www.scopus.com/inward/record.url?scp=85010796632&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85010796632&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:85010796632

VL - 642

SP - J1.9.1-J1.9.6

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

SN - 0272-9172

ER -