Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

Keyphrases

• Zinc Blende 100%
• AlGaN-GaN 100%
• GaN HEMT 100%
• Normally-off 100%
• Gate Metal 40%
• Design Parameters 40%
• N-GaN 40%
• 2-dimensional Electron Gas (2DEG) 40%
• Al Content 40%
• Turn-on Voltage 40%
• Layer Thickness 20%
• Heterojunction 20%
• Barrier Layer 20%
• Design Guidelines 20%
• Threshold Voltage 20%
• Barrier Thickness 20%
• N-layer 20%
• Gas Density 20%
• Unintentional Doping 20%
• Work Function 20%
• Design Trade-offs 20%
• III-nitrides 20%
• Transistor Technology 20%
• Synopsys 20%
• Gas Channel 20%
• Polarization-free 20%
• Technology Computer-aided Design 20%
• Sentaurus 20%
• Doping Amount 20%

Engineering

• Metal Gate 100%
• Design Parameter 100%
• Al Content 100%
• Nitride 50%
• Layer Thickness 50%
• Heterojunctions 50%
• Design Guideline 50%
• Gas Density 50%
• Design Trade 50%
• Gas Channel 50%
• Computer Aided Design 50%
• Barrier Layer 50%

Chemical Engineering

• Nitride 100%