Abstract
A numerical simulation of the optical properties of a novel InxGa1-xAs/ In1-yAlyAs multiple quantum well heterostructure with tunable charge density is presented. The influence of carriers and dopant ion charges on the electronic properties is simulated by a self-consistent Poisson-Schrodinger solver. The calculated optical constants of the quantum well reproduce well the experimental data. It appears that this model can easily be implemented to include current injection and used as a design tool to optimize the performance of optical modulator quantum well devices.
Original language | English (US) |
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Pages (from-to) | 709-711 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 3 |
Issue number | 8 |
DOIs | |
State | Published - Aug 1991 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering