Simulation of spin-qubit quantum dot circuit with integrated quantum point contact read-out

L. X. Zhang, D. V. Melnikov, Jean Pierre Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

We provide a physical analysis of the charging and detection of the first few electrons in a laterally-coupled GaAs/AlGaAs quantum dot (LCQD) circuit with integrated quantum point contact (QPC) read-out. Our analysis is based on the numerical solution of the Kohn-Sham equation incorporated into a three-dimensional self-consistent scheme for simulating the quantum device. Electronic states and eigenenergy spectra reflecting the particular LCQD confinement shape are obtained as a function of external gate voltages. We also derive the stability diagram for the first few electrons in the device, and obtain excellent agreement with experimental data.

Original languageEnglish (US)
Pages (from-to)111-114
Number of pages4
JournalJournal of Computational Electronics
Volume4
Issue number1-2
DOIs
StatePublished - Apr 2005

Keywords

  • Coupled quantum dots
  • Finite element method
  • Simulation
  • Stability diagram

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

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