Simulation of Si-SiO2 defect generation in CMOS chips: From atomistic structure to chip failure rates

K. Hess, A. Haggag, W. McMahon, B. Fischer, K. Cheng, J. Lee, Joseph W Lyding

Research output: Contribution to journalConference article

Abstract

We present a theory for Si-SiO2 defect generation related to hydrogen activation by hot electrons. Starting from atomistic considerations, we first explain the time dependence of degradation particularly at short-times. We show that this time dependence is intimately linked to variations of activation energies. These variations are then used to develop a theory for device failure times that includes detailed considerations of enhanced latent failure rates for deep-submicron devices. With this theory, we can connect experiments of degradation at short-times to latent failure rates which are difficult to assess otherwise.

Original languageEnglish (US)
Pages (from-to)93-95
Number of pages3
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 2000
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: Dec 10 2000Dec 13 2000

Fingerprint

CMOS
chips
Degradation
Defects
time dependence
Hot electrons
defects
degradation
Hydrogen
simulation
Activation energy
Chemical activation
hot electrons
activation
activation energy
Experiments
hydrogen

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Simulation of Si-SiO2 defect generation in CMOS chips : From atomistic structure to chip failure rates. / Hess, K.; Haggag, A.; McMahon, W.; Fischer, B.; Cheng, K.; Lee, J.; Lyding, Joseph W.

In: Technical Digest - International Electron Devices Meeting, 01.12.2000, p. 93-95.

Research output: Contribution to journalConference article

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AU - Fischer, B.

AU - Cheng, K.

AU - Lee, J.

AU - Lyding, Joseph W

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AB - We present a theory for Si-SiO2 defect generation related to hydrogen activation by hot electrons. Starting from atomistic considerations, we first explain the time dependence of degradation particularly at short-times. We show that this time dependence is intimately linked to variations of activation energies. These variations are then used to develop a theory for device failure times that includes detailed considerations of enhanced latent failure rates for deep-submicron devices. With this theory, we can connect experiments of degradation at short-times to latent failure rates which are difficult to assess otherwise.

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