Abstract
We present a theory for Si-SiO2 defect generation related to hydrogen activation by hot electrons. Starting from atomistic considerations, we first explain the time dependence of degradation particularly at short-times. We show that this time dependence is intimately linked to variations of activation energies. These variations are then used to develop a theory for device failure times that includes detailed considerations of enhanced latent failure rates for deep-submicron devices. With this theory, we can connect experiments of degradation at short-times to latent failure rates which are difficult to assess otherwise.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 93-95 |
| Number of pages | 3 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - Dec 1 2000 |
| Event | 2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: Dec 10 2000 → Dec 13 2000 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Simulation of Si-SiO2 defect generation in CMOS chips : From atomistic structure to chip failure rates. / Hess, K.; Haggag, A.; McMahon, W.; Fischer, B.; Cheng, K.; Lee, J.; Lyding, Joseph W.
In: Technical Digest - International Electron Devices Meeting, 01.12.2000, p. 93-95.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Simulation of Si-SiO2 defect generation in CMOS chips
T2 - From atomistic structure to chip failure rates
AU - Hess, K.
AU - Haggag, A.
AU - McMahon, W.
AU - Fischer, B.
AU - Cheng, K.
AU - Lee, J.
AU - Lyding, Joseph W
PY - 2000/12/1
Y1 - 2000/12/1
N2 - We present a theory for Si-SiO2 defect generation related to hydrogen activation by hot electrons. Starting from atomistic considerations, we first explain the time dependence of degradation particularly at short-times. We show that this time dependence is intimately linked to variations of activation energies. These variations are then used to develop a theory for device failure times that includes detailed considerations of enhanced latent failure rates for deep-submicron devices. With this theory, we can connect experiments of degradation at short-times to latent failure rates which are difficult to assess otherwise.
AB - We present a theory for Si-SiO2 defect generation related to hydrogen activation by hot electrons. Starting from atomistic considerations, we first explain the time dependence of degradation particularly at short-times. We show that this time dependence is intimately linked to variations of activation energies. These variations are then used to develop a theory for device failure times that includes detailed considerations of enhanced latent failure rates for deep-submicron devices. With this theory, we can connect experiments of degradation at short-times to latent failure rates which are difficult to assess otherwise.
UR - http://www.scopus.com/inward/record.url?scp=0034454623&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034454623&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0034454623
SP - 93
EP - 95
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
SN - 0163-1918
ER -