Simulation of Si-SiO2 defect generation in CMOS chips: From atomistic structure to chip failure rates

K. Hess, A. Haggag, W. McMahon, B. Fischer, K. Cheng, J. Lee, Joseph W Lyding

Research output: Contribution to journalConference article

Abstract

We present a theory for Si-SiO2 defect generation related to hydrogen activation by hot electrons. Starting from atomistic considerations, we first explain the time dependence of degradation particularly at short-times. We show that this time dependence is intimately linked to variations of activation energies. These variations are then used to develop a theory for device failure times that includes detailed considerations of enhanced latent failure rates for deep-submicron devices. With this theory, we can connect experiments of degradation at short-times to latent failure rates which are difficult to assess otherwise.

Original languageEnglish (US)
Pages (from-to)93-95
Number of pages3
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 2000
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: Dec 10 2000Dec 13 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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