Abstract
We present a theory for Si-SiO2 defect generation related to hydrogen activation by hot electrons. Starting from atomistic considerations, we first explain the time dependence of degradation particularly at short-times. We show that this time dependence is intimately linked to variations of activation energies. These variations are then used to develop a theory for device failure times that includes detailed considerations of enhanced latent failure rates for deep-submicron devices. With this theory, we can connect experiments of degradation at short-times to latent failure rates which are difficult to assess otherwise.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 93-95 |
| Number of pages | 3 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - Dec 1 2000 |
| Event | 2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: Dec 10 2000 → Dec 13 2000 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Hess, K., Haggag, A., McMahon, W., Fischer, B., Cheng, K., Lee, J., & Lyding, J. W. (2000). Simulation of Si-SiO2 defect generation in CMOS chips: From atomistic structure to chip failure rates. Technical Digest - International Electron Devices Meeting, 93-95.