Simulation of Si-MOSFETs with the mutation operator Monte Carlo method

Jürgen Jakumeit, Amanda Duncan, Umberto Ravaioli, Karl Hess

Research output: Contribution to journalArticlepeer-review


The Mutation Operator Monte Carlo method (MOMC) is a new type of Monte Carlo technique for the study of hot electron related effects in semiconductor devices. The MOMC calculates energy distributions of electrons by a physical mutation of the distribution towards a stationary condition. In this work we compare results of an one dimensional simulation of an 800 nm Si-MOSFET with full band Monte Carlo calculations and measurement results. Starting from the potential distribution resulting from a drift diffusion simulation, the MOMC calculates electron distributions which are comparable to FBMC-results within minutes on a modern workstation. From these distributions, substrate and gate currents close to experimental results can be calculated. These results show that the MOMC is useful as a post-processor for the investigation of hot electron related problems in Si-MOSFETs. Beside the computational efficiency, a further advantage of the MOMC compared to standard MC techniques is the good resolution of the high energy tail of the distribution without the necessity of any statistical enhancement.

Original languageEnglish (US)
Pages (from-to)343-347
Number of pages5
JournalVLSI Design
Issue number1-4
StatePublished - 1998


  • Hot electrons
  • Monte Carlo simulation

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering


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