Simulation of electronic/ionic mixed conduction in solid ionic memory devices

Hyuck In Kwon, Umberto Ravaioli

Research output: Contribution to journalArticle

Abstract

The electronic/ionic mixed conduction is examined in solid ionic memory devices by numerically solving the Poisson-Nernst-Planck equations using the computational platform PROPHET. The boundary conditions for the Poisson-Nernst-Planck system are determined based on the theoretical treatments as a Dirichlet type. The chemical composition of the mixed conductor under the reference electrode and the magnitude of applied biases are considered as important parameters in the simulation. The results show that the deviation of carrier distribution increases from the analytical solutions with the increase of applied biases and the decrease of the partial pressure of the non-metallic component near the reference electrode in solid ionic memory devices.

Original languageEnglish (US)
Pages (from-to)1047-1051
Number of pages5
JournalMicroelectronics Journal
Volume37
Issue number10
DOIs
StatePublished - Oct 1 2006

Keywords

  • Carrier distribution
  • Electronic/ionic mixed conduction
  • PROPHET
  • Poisson-Nernst-Planck equations
  • Solid ionic memory devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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