Simulation of a Long Term Memory Device with a Full Bandstructure Monte Carlo Approach

Keyphrases

• Monte Carlo Method 100%
• Banded Structure 100%
• Long-term Memory 100%
• Memory Device 100%
• Semiconductors 33%
• Potential Profile 33%
• Device-independent 33%
• Electron Injection 33%
• Device Operation 33%
• Gate Bias 33%
• Gate Structure 33%
• Gate Oxide 33%
• Conduction Band Edge 33%
• Drift-diffusion 33%
• Hot Electrons 33%
• Drain Bias 33%
• Gate Injection 33%
• Floating Gate 33%
• Electron Distribution Function 33%
• Injection Current 33%
• Pisces 33%
• Prototype Structure 33%
• Practical Simulation 33%
• Monte Carlo Simulator 33%
• Charging Characteristics 33%
• High-energy Tail 33%
• Post-processor 33%

Engineering

• Monte Carlo Approach 100%
• Term Memory 100%
• Experimental Result 50%
• Gate Bias 50%
• Gate Oxide 50%
• Conduction Band Edge 50%
• Drain Bias 50%
• Current Injection 50%
• Floating Gate 50%
• Electron Effect 50%
• Drain Separation 50%
• Electron Distribution Function 50%
• Hot Electron 50%

Material Science

• Silicon 100%
• Oxide Compound 100%
• Hot Electron 100%