Abstract
Simulations of charging characteristics of a long term memory device, based on a floating gate structure, are presented. The analysis requires the inclusion of hot electron effects and a detailed account of the semiconductor bandstructure, because device operation is based on the injection of electrons into the gate oxide high above the silicon conduction band edge. We have developed a Monte Carlo simulator based on a full bandstructure approach which accurately accounts for the high energy tail of the electron distribution function. For practical simulation of the prototype structure, with 3.0-µm source-drain separation, the simulator is used as a post-processor on the potential profile obtained from a PISCES IIB drift-diffusion solution. The computations are in quantitative agreement with experimental results for the gate injection current, measured at fixed drain and gate biases.
Original language | English (US) |
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Pages (from-to) | 360-362 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 16 |
Issue number | 8 |
DOIs | |
State | Published - Aug 1995 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering