Simulation and optimization of spin-qubit quantum dot circuit with integrated quantum point contact read-out

Lingxiao Zhang; Dmitriy Melnikov; Jean Pierre Leburton

Simulation and optimization of spin-qubit quantum dot circuit with integrated quantum point contact read-out

Lingxiao Zhang, Dmitriy Melnikov, Jean Pierre Leburton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The use of computer simulation to study laterally coupled quantum dot (LCQD) circuit with integrated quantum point contact for charge read-out was described. The self consistently three-dimensional (3D) Poisson and Kohn-Sham equations within the local spin density approximation was solved to obtain electron density inside the LCQD. Eigenergy spectra and electronic states reflecting the particular LCQD confinement were obtained as a function of the external gate biases. The results show that the constrictions with dented designs give more sensitive detectors than conventional QPC geometries.

Original language	English (US)
Title of host publication	2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
Pages	116-117
Number of pages	2
State	Published - 2004
Event	2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts - West Lafayette, IN, United States Duration: Oct 24 2004 → Oct 27 2004

Publication series

Name	2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Other

Other	2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
Country/Territory	United States
City	West Lafayette, IN
Period	10/24/04 → 10/27/04

ASJC Scopus subject areas

Engineering(all)

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Simulation and optimization of spin-qubit quantum dot circuit with integrated quantum point contact read-out. / Zhang, Lingxiao; Melnikov, Dmitriy; Leburton, Jean Pierre.
2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts. 2004. p. 116-117 (2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, L, Melnikov, D & Leburton, JP 2004, Simulation and optimization of spin-qubit quantum dot circuit with integrated quantum point contact read-out. in 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts. 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts, pp. 116-117, 2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts, West Lafayette, IN, United States, 10/24/04.

Zhang, Lingxiao ; Melnikov, Dmitriy ; Leburton, Jean Pierre. / Simulation and optimization of spin-qubit quantum dot circuit with integrated quantum point contact read-out. 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts. 2004. pp. 116-117 (2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts).

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title = "Simulation and optimization of spin-qubit quantum dot circuit with integrated quantum point contact read-out",

abstract = "The use of computer simulation to study laterally coupled quantum dot (LCQD) circuit with integrated quantum point contact for charge read-out was described. The self consistently three-dimensional (3D) Poisson and Kohn-Sham equations within the local spin density approximation was solved to obtain electron density inside the LCQD. Eigenergy spectra and electronic states reflecting the particular LCQD confinement were obtained as a function of the external gate biases. The results show that the constrictions with dented designs give more sensitive detectors than conventional QPC geometries.",

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N2 - The use of computer simulation to study laterally coupled quantum dot (LCQD) circuit with integrated quantum point contact for charge read-out was described. The self consistently three-dimensional (3D) Poisson and Kohn-Sham equations within the local spin density approximation was solved to obtain electron density inside the LCQD. Eigenergy spectra and electronic states reflecting the particular LCQD confinement were obtained as a function of the external gate biases. The results show that the constrictions with dented designs give more sensitive detectors than conventional QPC geometries.

AB - The use of computer simulation to study laterally coupled quantum dot (LCQD) circuit with integrated quantum point contact for charge read-out was described. The self consistently three-dimensional (3D) Poisson and Kohn-Sham equations within the local spin density approximation was solved to obtain electron density inside the LCQD. Eigenergy spectra and electronic states reflecting the particular LCQD confinement were obtained as a function of the external gate biases. The results show that the constrictions with dented designs give more sensitive detectors than conventional QPC geometries.

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BT - 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

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Simulation and optimization of spin-qubit quantum dot circuit with integrated quantum point contact read-out

Abstract

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