Simulated self-assembly and optoelectronic properties of InAs/GaAs quantum dot arrays

H. T. Johnson, V. Nguyen, A. F. Bower

Research output: Contribution to journalArticle

Abstract

Numerical simulations are used to compute the quantum confinement and optical absorption spectra of a quantum dot array that is fabricated by the spontaneous formation of islands during deposition of a strained epitaxial film. The epitaxial growth process is first modeled using a continuum finite element method, so the quantum dot array under consideration is itself the result of a computational model. Quantum confinement properties of the resulting island array are then computed by approximating the band structure of the solid using the Luttinger-Kohn kṡp Hamiltonian, suitably extended to account for the effects of strain in the islands. The calculations predict the evolution of the spectrum of electron and hole states during self-assembly and coarsening of the island array including a two-dimensional to zero-dimensional electron gas transition at the onset of island self-assembly. For a fully formed array of quantum dots the spectral properties are dominated by inhomogeneous broadening, or the effects of a distribution in size and shape of dots in the array. In particular, there is found to be energy degeneracy between s-type states in smaller quantum dots and p-type or d-type states in larger quantum dots. Also, among the states in the computed electron and hole spectra are some states with strong wave function coupling between pairs of adjacent dots and other states that are delocalized throughout the entire wetting layer. The optical absorption spectrum for the quantum dot array, computed from the electron and hole spectra, compares well with experimental photoemission and absorption data.

Original languageEnglish (US)
Pages (from-to)4653-4663
Number of pages11
JournalJournal of Applied Physics
Volume92
Issue number8
DOIs
StatePublished - Oct 15 2002

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self assembly
quantum dots
optical spectrum
optical absorption
absorption spectra
electron states
wetting
electron gas
finite element method
electrons
photoelectric emission
wave functions
continuums
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Simulated self-assembly and optoelectronic properties of InAs/GaAs quantum dot arrays. / Johnson, H. T.; Nguyen, V.; Bower, A. F.

In: Journal of Applied Physics, Vol. 92, No. 8, 15.10.2002, p. 4653-4663.

Research output: Contribution to journalArticle

@article{82969e2d097b428fadab318ba60ff974,
title = "Simulated self-assembly and optoelectronic properties of InAs/GaAs quantum dot arrays",
abstract = "Numerical simulations are used to compute the quantum confinement and optical absorption spectra of a quantum dot array that is fabricated by the spontaneous formation of islands during deposition of a strained epitaxial film. The epitaxial growth process is first modeled using a continuum finite element method, so the quantum dot array under consideration is itself the result of a computational model. Quantum confinement properties of the resulting island array are then computed by approximating the band structure of the solid using the Luttinger-Kohn kṡp Hamiltonian, suitably extended to account for the effects of strain in the islands. The calculations predict the evolution of the spectrum of electron and hole states during self-assembly and coarsening of the island array including a two-dimensional to zero-dimensional electron gas transition at the onset of island self-assembly. For a fully formed array of quantum dots the spectral properties are dominated by inhomogeneous broadening, or the effects of a distribution in size and shape of dots in the array. In particular, there is found to be energy degeneracy between s-type states in smaller quantum dots and p-type or d-type states in larger quantum dots. Also, among the states in the computed electron and hole spectra are some states with strong wave function coupling between pairs of adjacent dots and other states that are delocalized throughout the entire wetting layer. The optical absorption spectrum for the quantum dot array, computed from the electron and hole spectra, compares well with experimental photoemission and absorption data.",
author = "Johnson, {H. T.} and V. Nguyen and Bower, {A. F.}",
year = "2002",
month = "10",
day = "15",
doi = "10.1063/1.1505687",
language = "English (US)",
volume = "92",
pages = "4653--4663",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Simulated self-assembly and optoelectronic properties of InAs/GaAs quantum dot arrays

AU - Johnson, H. T.

AU - Nguyen, V.

AU - Bower, A. F.

PY - 2002/10/15

Y1 - 2002/10/15

N2 - Numerical simulations are used to compute the quantum confinement and optical absorption spectra of a quantum dot array that is fabricated by the spontaneous formation of islands during deposition of a strained epitaxial film. The epitaxial growth process is first modeled using a continuum finite element method, so the quantum dot array under consideration is itself the result of a computational model. Quantum confinement properties of the resulting island array are then computed by approximating the band structure of the solid using the Luttinger-Kohn kṡp Hamiltonian, suitably extended to account for the effects of strain in the islands. The calculations predict the evolution of the spectrum of electron and hole states during self-assembly and coarsening of the island array including a two-dimensional to zero-dimensional electron gas transition at the onset of island self-assembly. For a fully formed array of quantum dots the spectral properties are dominated by inhomogeneous broadening, or the effects of a distribution in size and shape of dots in the array. In particular, there is found to be energy degeneracy between s-type states in smaller quantum dots and p-type or d-type states in larger quantum dots. Also, among the states in the computed electron and hole spectra are some states with strong wave function coupling between pairs of adjacent dots and other states that are delocalized throughout the entire wetting layer. The optical absorption spectrum for the quantum dot array, computed from the electron and hole spectra, compares well with experimental photoemission and absorption data.

AB - Numerical simulations are used to compute the quantum confinement and optical absorption spectra of a quantum dot array that is fabricated by the spontaneous formation of islands during deposition of a strained epitaxial film. The epitaxial growth process is first modeled using a continuum finite element method, so the quantum dot array under consideration is itself the result of a computational model. Quantum confinement properties of the resulting island array are then computed by approximating the band structure of the solid using the Luttinger-Kohn kṡp Hamiltonian, suitably extended to account for the effects of strain in the islands. The calculations predict the evolution of the spectrum of electron and hole states during self-assembly and coarsening of the island array including a two-dimensional to zero-dimensional electron gas transition at the onset of island self-assembly. For a fully formed array of quantum dots the spectral properties are dominated by inhomogeneous broadening, or the effects of a distribution in size and shape of dots in the array. In particular, there is found to be energy degeneracy between s-type states in smaller quantum dots and p-type or d-type states in larger quantum dots. Also, among the states in the computed electron and hole spectra are some states with strong wave function coupling between pairs of adjacent dots and other states that are delocalized throughout the entire wetting layer. The optical absorption spectrum for the quantum dot array, computed from the electron and hole spectra, compares well with experimental photoemission and absorption data.

UR - http://www.scopus.com/inward/record.url?scp=18744365154&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18744365154&partnerID=8YFLogxK

U2 - 10.1063/1.1505687

DO - 10.1063/1.1505687

M3 - Article

AN - SCOPUS:18744365154

VL - 92

SP - 4653

EP - 4663

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -