Simplified current and delay models for deep submicron CMOS digital circuits

Makram M. Mansour, Naresh R Shanbhag

Research output: Contribution to journalConference articlepeer-review

Abstract

This paper presents a model for estimating the drain current in deep submicron (DSM) CMOS devices based on Sakurai and Newton's [1] work, and hence is referred to as the modified SN-model. The proposed model preserves the simplicity of the SN-model while providing accurate drain current estimates for varying device widths. Manually computed current and delay values for inverter circuits via the proposed model match SPICE level 49 within 1.2% average (3% maximum) error in 0.25 μm and 0.18 μm CMOS processes over a wide range of transistor widths, fanouts, and input rise/fall times. A generalized delay model for circuits with interconnect is also proposed with accuracy within 3% error over a wide range of buffer sizes and interconnect lengths. The proposed model has been successfully incorporated into a senior level circuit design course at the University of Illinois at Urbana-Champaign.

Original languageEnglish (US)
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume5
StatePublished - Jan 1 2002
Event2002 IEEE International Symposium on Circuits and Systems - Phoenix, AZ, United States
Duration: May 26 2002May 29 2002

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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