Abstract
A process to form a silicon on insulator (SOI) structure suspended in air was demonstrated. The structure provided electrical isolation while providing good thermal contact to the substrate. Selective epitaxial growth (SEG) of silicon was to provide robust, reliable mechanical and electrical contacts between the SOI layer and the substrate. The problem of uncontrollable lateral etching of the buried oxide to release the silicon diaphragms was solved by the process.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1995-1997 |
| Number of pages | 3 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 19 |
| Issue number | 5 |
| DOIs | |
| State | Published - Sep 2001 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering