Silicon-on-insulator processes for the fabrication of novel nanostructures

S. Bourland, J. Denton, A. Ikram, G. W. Neudeck, R. Bashir

Research output: Contribution to journalArticlepeer-review

Abstract

A process to form a silicon on insulator (SOI) structure suspended in air was demonstrated. The structure provided electrical isolation while providing good thermal contact to the substrate. Selective epitaxial growth (SEG) of silicon was to provide robust, reliable mechanical and electrical contacts between the SOI layer and the substrate. The problem of uncontrollable lateral etching of the buried oxide to release the silicon diaphragms was solved by the process.

Original languageEnglish (US)
Pages (from-to)1995-1997
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number5
DOIs
StatePublished - Sep 2001
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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