Silicon-nitride surface passivation of submicrometer silicon waveguides for low-power optical switches

Joris Van Campenhout, William M.J. Green, Xiaoping Liu, Solomon Assefa, Richard M. Osgood, Yurii A Vlasov

Research output: Contribution to journalArticlepeer-review

Abstract

We report on a Si 3 N 4 -based surface-passivation technique for increasing free-carrier lifetimes in submicrometer silicon-on-insulator waveguides by up to 2 orders of magnitude. The carrier lifetime was measured by injecting free carriers into a critically coupled ring resonator through photoexcitation by short pump pulses and subsequently tracking the spectral detuning of the resonator during the carrier-recombination phase. Carrier lifetimes of up to 70 ns were obtained in waveguides passivated with a 45-nm-thick Si 3 N 4 coating. Such surface passivation is essential for low-power operation of optical switches based on carrier injection.

Original languageEnglish (US)
Pages (from-to)1534-1536
Number of pages3
JournalOptics Letters
Volume34
Issue number10
DOIs
StatePublished - May 15 2009
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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