Abstract
We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band gap or band overlap in the different layers.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3572-3576 |
| Number of pages | 5 |
| Journal | Nano letters |
| Volume | 10 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 8 2010 |
| Externally published | Yes |
Keywords
- Graphene
- PECVD
- band gap
- band overlap
- mobility
- silicon nitride
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering
Fingerprint
Dive into the research topics of 'Silicon nitride gate dielectrics and band gap engineering in graphene layers'. Together they form a unique fingerprint.Cite this
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS